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PDF HMC478MP86 Data sheet ( Hoja de datos )

Número de pieza HMC478MP86
Descripción SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4.0 GHz
Fabricantes Hittite Microwave Corporation 
Logotipo Hittite Microwave Corporation Logotipo



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v00.1004
8
Typical Applications
The HMC478MP86 is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
HMC478MP86
www.DataSheet4U.com
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Features
P1dB Output Power: +18 dBm
Gain: 22 dB
Output IP3: +32 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Robust 1,000V ESD, Class 1C
General Description
The HMC478MP86 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifier
covering DC to 4 GHz. This Micro-P packaged
amplifier can be used as a cascadable 50 Ohm
RF/IF gain stage as well as a LO or PA driver with
up to +20 dBm output power. The HMC478MP86
offers 22 dB of gain with a +32 dBm output IP3
at 850 MHz while requiring only 62 mA from a
single positive supply. The Darlington feedback
pair used results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
8 - 366
Electrical Specifications, Vs= 5.0 V, Rbias= 18 Ohm, TA = +25° C
Parameter
Min. Typ.
Gain
DC - 1.0 GHz 19 22
1.0 - 2.0 GHz 15 18
2.0 - 3.0 GHz 13 16
3.0 - 4.0 GHz 11 14
Gain Variation Over Temperature
DC - 4.0 GHz
0.015
Input Return Loss
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
15
12
13
Output Return Loss
DC - 1.0 GHz
1.0 - 4.0 GHz
20
17
Reverse Isolation
DC - 4.0 GHz
20
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz 15 18
1.0 - 2.0 GHz 13 16
2.0 - 3.0 GHz 11 14
3.0 - 4.0 GHz
9
12
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
32
29
25
Max.
0.02
Units
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Note: Data taken with broadband bias tee on device output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

1 page




HMC478MP86 pdf
8
Pin Descriptions
Pin Number
Function
1 RFIN
v00.1004
HMC478MP86
www.DataSheet4U.com
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
3 RFOUT
2, 4 GND
RF output and DC Bias (Vcc) for the output stage.
These pins must be connected to RF/DC ground.
Application Circuit
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
RBIAS VALUE
RBIAS POWER RATING
5V
18
1/8 W
6V
35
1/4 W
8V
67
1/2 W
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 µF
900
56 nH
100 pF
Frequency (MHz)
1900
2200
18 nH
18 nH
100 pF
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
8 - 370
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

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