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Número de pieza | HMC499LC4 | |
Descripción | SMT PHEMT MEDIUM POWER AMPLIFIER | |
Fabricantes | Hittite Microwave Corporation | |
Logotipo | ||
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HMC499LC4
www.DataSheet4U.com
SMT PHEMT MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
5
Typical Applications
Features
The HMC499LC4 is ideal for use as a driver or
power amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military End-Use
+34 dBm Output IP3
Saturated Power: +24 dBm @ 16% PAE
16 dB Gain
+5.0 V @ 200 mA Supply
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm SMT Package
Functional Diagram
General Description
The HMC499LC4 is a high dynamic range GaAs
PHEMT MMIC Medium Power Amplifier housed in a
leadless “Pb free” RoHS Compliant SMT package.
Operating from 21 to 32 GHz, the amplifier provides
16 dB of gain, +24 dBm of saturated power and 16%
PAE from a +5.0 V supply voltage. The RF I/Os are
DC blocked and matched to 50 Ohms for ease of
use. The HMC499LC4 eliminates the need for wire
bonding, allowing use of surface mount manufacturing
techniques.
Electrical Specifications, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 200 mA*
Parameter
Min. Typ. Max. Min. Typ. Max. Min.
Frequency Range
21 - 24
24 - 28
Gain
14 17
13 16
9
Gain Variation Over Temperature
0.02 0.03
0.02 0.03
Input Return Loss
10 8
Output Return Loss
11 12
Output Power for 1 dB Compression (P1dB)
20 23
20 23
20
Saturated Output Power (Psat)
23.5
23.5
Output Third Order Intercept (IP3)
31 34
Noise Figure
65
Supply Current (Idd)(Vdd = +5V, Vgg = -0.8V Typ.)
200
200
* Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical.
Typ.
28 - 32
13
0.02
8
8
23
24
33.5
5
200
Max.
0.03
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
5 - 518
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page 5
v00.1204
HMC499LC4
www.DataSheet4U.com
SMT PHEMT MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
Pin Descriptions
Pin Number
1, 5-8, 10-14,
18, 20, 22, 24
Function
N/C
2, 4, 15, 17
GND
3 RFIN
9 Vgg
16 RFOUT
Description
No connection required. These pins may be connected to
RF/DC ground without affecting performance.
Package bottom has an exposed metal paddle that must also
be connected to RF/DC ground.
This pin is AC coupled and matched to 50 Ohms from
21 - 32 GHz.
Gate control for amplifier. Adjust to achieve Id of 200 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF,
1000 pF and 2.2 μF are required.
This pad is AC coupled and matched to 50 Ohms from
21 - 32 GHz.
23, 21, 19
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 1000pF, and 2.2 μF are required.
Interface Schematic
Application Circuit
Component
C1
C2
C3
Value
100 pF
1,000 pF
2.2 μF
5 - 522
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet HMC499LC4.PDF ] |
Número de pieza | Descripción | Fabricantes |
HMC499LC4 | SMT PHEMT MEDIUM POWER AMPLIFIER | Hittite Microwave Corporation |
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