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PDF HMC516 Data sheet ( Hoja de datos )
| Número de pieza | HMC516 | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER 7 - 17 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC516 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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v00.0904
HMC516
www.DataSheet4U.com
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 17 GHz
1
Typical Applications
Features
The HMC516 is ideal for use as a LNA or driver ampli-
fier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Noise Figure: 1.8 dB
Gain: 20 dB
OIP3: +20 dBm
Single Supply: 3V @ 65 mA
50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC516 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier (LNA) which
covers the 7 to 17 GHz frequency range. The HMC516
provides 20 dB of small signal gain, 1.8 dB of noise
figure and has an output IP3 greater than +20 dBm.
The chip can easily be integrated into hybrid or MCM
assemblies due to its small size. All data is tested
with the chip in a 50 Ohm test fixture connected via
0.075mm (3 mil) ribbon bonds of minimal length 0.31
mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires
may also be used to make the RFIN and RFOUT
connections.
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
Min.
17
10
Typ.
7-9
19.5
0.02
2.5
8
13
13
15
20
65
Max.
0.03
3.3
Min.
18
12
Typ.
9 - 12
20.5
0.02
2.0
10
15
15
16
20
65
Max.
0.03
2.6
Min.
18
13
Typ.
12 - 17
20.5
0.02
1.8
10
17
16
17
20
65
Max.
0.03
2.3
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
1 - 156
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
1
v00.0904
HMC516
www.DataSheet4U.com
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 17 GHz
Pad Descriptions
Pad Number
Function
1 RFIN
Description
This pad is AC coupled and matched to 50 Ohms from
7 - 17 GHz.
2, 3, 4
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
5
6, 7, 8
Die Bottom
RFOUT
G3, 2, 1
GND
This pad is AC coupled and matched to 50 Ohms from
7 - 17 GHz.
These pads must be connected to RF/DC ground for proper
operation.
Die Bottom must be connected to RF/DC ground.
Interface Schematic
Assembly Diagram
1 - 160
Note: G1, G2 and G3 must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC516.PDF ] | |
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