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PDF M41T56C64 Data sheet ( Hoja de datos )

Número de pieza M41T56C64
Descripción Serial Real Time Clock
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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M41T56C64
Serial Real Time Clock with 56 bytes of NVRAM
+ 64 Kbit (8192 bit x 8) EEPROM
Feature summary
5V ±10% supply voltage
I2C bus compatible
Operating temperature of –40 to 85°C
Packaging includes:
– 18-lead SOIC (with embedded crystal)
RoHS compliant
Serial RTC features
Counters for seconds, minutes, hours, day,
date, month, years, and century
Embedded crystal package
Software clock calibration
Automatic power-fail detect and switch circuitry
56 bytes of general purpose SRAM
Ultra-low battery supply current of 450nA
Automatic leap year compensation
Special software programmable output
Two-wire I2C serial interface supports 100kHz
protocol
Serial EEPROM features
8192 bytes of general purpose EEPROM
(more than 1e6 erase/write cycles)
Two-wire I2C serial interface supports 400kHz
protocol
Byte and page write (up to 32 bytes)
More than 40 year data retention
Self-timed programming cycle
Embedded crystal
18
1
SOX18(MY)
18-pin (300mil) SOIC
September 2006
Rev 4
1/19
www.st.com
1

1 page




M41T56C64 pdf
M41T56C64
1 Summary description
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The M41T56C64 is a low power, Serial Real Time Clock with 56 bytes of NVRAM plus a
64Kb EEPROM (see Figure 3). A built-in 32,768Hz oscillator (crystal controlled) and the first
8 bytes of the RAM are used for the clock/calendar function and are configured in binary
coded decimal (BCD) format. Addresses and data are transferred serially via a two-line, bi-
directional bus. The built-in address register is incremented automatically after each WRITE
or READ data byte.
The M41T56C64 clock has a built-in power sense circuit which detects power failures and
automatically switches to the battery supply during power failures. The energy needed to
sustain the RAM and clock operations can be supplied from a small lithium coin cell.
Typical data retention time for the Serial RTC is in excess of 10 years with a 50mAh, 3V
lithium cell. The M41T56C64 is supplied in an 18-lead Plastic SOIC package.
1.1 Calibration
As the crystal is molded together with the silicon in this package, ST can program the
appropriate calibration value necessary to achieve ±5 ppm accuracy at 25°C after two SMT
reflows (see Figure 4). This calibration value will be written into address 1550h of
the EEPROM. This clock accuracy can then be guaranteed to drift no more than ±3 ppm the
first year, and ±1 ppm for each following year due to crystal aging.
Figure 1. Logic diagram
VCC VBAT
SCL
E0
E1
E2
WC
M41T56
+
M24C64
(EEPROM)
SDA
FT/OUT(1)
1. Open drain output
VSS
AI09123
5/19

5 Page





M41T56C64 arduino
M41T56C64
6 DC and AC parameters
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This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC characteristic
tables are derived from tests performed under the measurement conditions listed in the
relevant tables. Designers should check that the operating conditions in their projects match
the measurement conditions when using the quoted parameters.
Table 4. Operating and AC measurement conditions(1)
Parameter
Value
Supply voltage (VCC)
4.5 to 5.5
Ambient operating temperature (TA)
–40 to 85
Load capacitance (CL)
100
Input rise and fall times
50 (max)
Input pulse voltages
0.2VCC to 0.8VCC
Input and output timing ref. voltages
0.3VCC to 0.7VCC
1. Output Hi-Z is defined as the point where data is no longer driven.
Figure 5. AC measurement I/O waveform
Unit
V
°C
pF
ns
V
V
0.8VCC
0.2VCC
0.7VCC
0.3VCC
AI02568
11/19

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