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Toshiba Semiconductor - Silicon Epitaxial Planar Type

Numéro de référence JDV2S13FS
Description Silicon Epitaxial Planar Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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JDV2S13FS fiche technique
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S13FS
VCO for the UHF band
High capacitance ratio: C1V/C4V = 2.8 (typ.)
Low series resistance: rs = 0.55 (typ.)
This device is suitable for use in a small-size tuner.
JDV2S13FS
www.DataSheet4U.com
Unit: mm
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 10 V
Tj 150 °C
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C4V
C1V/C4V
rs
IR = 1 μA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
0.2
0.07 M A ±0.05
0.1±0.05
0.48+-00..0023
JEDEC
JEITA
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯
⎯⎯
3
5.7 6.7
1.85 2.45
2.7 2.8
0.55 0.7
V
nA
pF
Ω
E
1 2007-11-01

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