DataSheet.es    


PDF JDV2S10S Data sheet ( Hoja de datos )

Número de pieza JDV2S10S
Descripción TOSHIBA DIODE Silicon Epitaxial Planar Type
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de JDV2S10S (archivo pdf) en la parte inferior de esta página.


Total 2 Páginas

No Preview Available ! JDV2S10S Hoja de datos, Descripción, Manual

TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S10S
VCO for UHF Band Radio
JDV2S10S
www.DataSheet4U.com
High Capacitance Ratio: C0.5V/C2.5V = 2.5 (typ.)
Low Series Resistance : rs = 0.35 (typ.)
This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
10
150
55~150
Unit
V
°C
°C
Electrical Characteristics (Ta = 25°C)
Weight: 0.0011 g
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR IR = 1 µA
IR VR = 10 V
C0.5V
VR = 0.5 V, f = 1 MHz
C2.5V
VR = 2.5 V, f = 1 MHz
C0.5V/C2.5V
rs VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Min Typ. Max Unit
10
7.3
2.75
2.4
2.5
0.35
3
8.4
3.4
0.5
V
nA
pF
Marking
F
000707EAA2
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
2001-01-09 1/2

1 page





PáginasTotal 2 Páginas
PDF Descargar[ Datasheet JDV2S10S.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
JDV2S10FSSilicon Epitaxial Planar Type VCOToshiba Semiconductor
Toshiba Semiconductor
JDV2S10STOSHIBA DIODE Silicon Epitaxial Planar TypeToshiba Semiconductor
Toshiba Semiconductor
JDV2S10TVCO for UHF Band RadioToshiba Semiconductor
Toshiba Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar