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PDF JDP2S05FS Data sheet ( Hoja de datos )

Número de pieza JDP2S05FS
Descripción UHF~VHF Band RF Switch Applications
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! JDP2S05FS Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S05FS
UHF~VHF Band RF Switch Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: rs = 1.5 Ω (typ.)
Low capacitance: CT = 0.32 pF (typ.)
JDP2S05FS
www.DataSheet4U.com
Unit:mm
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
0.2
±0.05
0.1±0.05
Reverse voltage
VR 20 V
Forward current
Power dissipation(Note:1)
IF 50 mA
Pd 150 mW
0.48+-00..0032
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
JEITA
TOSHIBA
1-1L1A
Weight: 0.0006 g(Typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: When mounted on glass epoxy board
board size : 20mm × 20mm × 1.6mmt
Cu foot area : 4mm × 4mm × 0.035mmt
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
VR IR = 0.1μA
Reverse current
IR VR = 20 V
Forward voltage
VF IF = 50 mA
Capacitance(Note2)
CT VR = 1 V, f = 1 MHz
Series resistance
rs IF = 1 mA, f = 100 MHz
Note2: Signal level when capacitance is measured. Vsig = 100 mVrms
Min Typ. Max Unit
20
0.21
0.32
1.5
0.1
0.94
0.42
2.2
V
μA
V
pF
Ω
Marking
3
1 2007-11-01

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