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Toshiba Semiconductor - UHF~VHF Band RF Switch Applications

Numéro de référence JDP2S05CT
Description UHF~VHF Band RF Switch Applications
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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JDP2S05CT fiche technique
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S05CT
UHF~VHF Band RF Switch Applications
JDP2S05CT
www.DataSheet4U.com
Unit:mm
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: rs = 1.5 Ω (typ.)
Low capacitance: CT = 0.32 pF (typ.)
1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
2
0.6±0.05
0.05±0.03 0.5±0.03
Reverse voltage
Forward current
Junction temperature
Storage temperature range
VR 20 V
IF 50 mA
Tj 150 °C
Tstg
55~150
°C
CST2
1:Cathode
2:Anode
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
JEDEC
JEITA
TOSHIBA
1-1P1A
Weight: 0.00077 g(Typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
VR IR = 0.1 μA
Reverse current
IR VR = 20 V
Forward voltage
VF IF = 50 mA
Capacitance(Note2)
CT VR = 1 V, f = 1 MHz
Series resistance
rs IF = 1 mA, f = 100 MHz
Note1: Signal level when capacitance is measured. Vsig = 100 mVrms
Min Typ. Max Unit
20
0.21
0.32
1.5
0.1
0.94
0.42
2.2
V
μA
V
pF
Ω
Marking
Cathode
03
Part Number
1 2007-11-01

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