DataSheetWiki


HAT2285WP fiches techniques PDF

Renesas Technology - Silicon N Channel Power MOS FET

Numéro de référence HAT2285WP
Description Silicon N Channel Power MOS FET
Fabricant Renesas Technology 
Logo Renesas Technology 





1 Page

No Preview Available !





HAT2285WP fiche technique
HAT2285WP
www.DataSheet4U.com
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G1371-0300
Rev.3.00
Apr 05, 2006
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PWSN0008DB-A
(Package name: WPAK-D)
5 678
4 32 1
2
G1
78
D1 D1
56
S1/D2 S1/D2
4
G2
S1/D2(kelvin)
1
MOS1
S2
3
MOS2 and
Schottky Barrier Diode
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse)Note1
Reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1 %
2. Tc = 25°C
MOS1
30
±20
14
56
14
8
150
–55 to +150
Ratings
MOS2 & SBD
30
±12
22
88
22
15
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.3.00 Apr 05, 2006 page 1 of 9

PagesPages 10
Télécharger [ HAT2285WP ]


Fiche technique recommandé

No Description détaillée Fabricant
HAT2285WP Silicon N Channel Power MOS FET Renesas Technology
Renesas Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche