DataSheetWiki


HAT2281C fiches techniques PDF

Renesas Technology - Silicon N Channel MOS FET Power Switching

Numéro de référence HAT2281C
Description Silicon N Channel MOS FET Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





1 Page

No Preview Available !





HAT2281C fiche technique
HAT2281C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 109 mtyp.(at VGS = 4.5 V)
Low drive current
High density mounting
2.5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
www.DataSheet4U.com
REJ03G1328-0200
Rev.2.00
Jan 26, 2006
23 45
DD DD
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to Source voltage
VDSS
Gate to Source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - Drain diode reverse Drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
Ratings
60
±12
2
8
2
850
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.2.00 Jan 26, 2006 page 1 of 6

PagesPages 7
Télécharger [ HAT2281C ]


Fiche technique recommandé

No Description détaillée Fabricant
HAT2281C Silicon N Channel MOS FET Power Switching Renesas Technology
Renesas Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche