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What is HAT2279H?

This electronic component, produced by the manufacturer "Renesas Technology", performs the same function as "Silicon N Channel Power MOS FET Power Switching".


HAT2279H Datasheet PDF - Renesas Technology

Part Number HAT2279H
Description Silicon N Channel Power MOS FET Power Switching
Manufacturers Renesas Technology 
Logo Renesas Technology Logo 


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No Preview Available ! HAT2279H datasheet, circuit

HAT2279H
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 9.5 mtyp. (at VGS = 10 V)
Lead Free
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
1 234
4
G
5
D
SSS
123
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REJ03G1464-0200
Rev.2.00
Jul 05, 2006
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
80
±20
30
120
30
25
83
25
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Jul 05, 2006 page 1 of 7

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HAT2279H equivalent
HAT2279H
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30 10 V
VGS = 0 V, –5 V
20
10
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
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Maximum Avalanche Energy vs.
Channel Temperature Derating
100
IAP = 25 A
VDD = 50 V
80 duty < 0.1%
Rg 50
60
40
20
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.01
0.02
0.011shot
pulse
10 100
θch - c(t) = γs (t) • θch - c
θch - c = 5°C/ W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
L IAP2
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.2.00 Jul 05, 2006 page 5 of 7


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HAT2279H electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
HAT2279HThe function is Silicon N Channel Power MOS FET Power Switching. Renesas TechnologyRenesas Technology
HAT2279NThe function is Silicon N Channel Power MOS FET Power Switching. Renesas TechnologyRenesas Technology

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