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Renesas Technology - Silicon N Channel Power MOS FET High Speed Power Switching

Numéro de référence HAT2215RJ
Description Silicon N Channel Power MOS FET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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HAT2215RJ fiche technique
HAT2215R, HAT2215RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
www.DataSheet4U.com
REJ03G0486-0300
Rev.3.00
Dec.22.2004
Outline
SOP-8
2
G
78
DD
4
G
S1
MOS1
56
DD
S3
MOS2
8 7 65
1 234
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
HAT2215R
HAT2215RJ
Drain to source voltage
Gate to source voltage
VDSS
VGSS
80
±20
80
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
3.4
20.4
3.4
20.4
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 2
EAR Note 2
Pch Note3
Pch Note4
3.4
1.5
2.2
3.4
3.4
1.54
1.5
2.2
Channel temperature Tch 150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tch = 25°C, Rg 50
3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
4. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
W
°C
°C
Rev.3.00 Dec. 22, 2004 page 1 of 7

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