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Número de pieza | HAT2215R | |
Descripción | Silicon N Channel Power MOS FET High Speed Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT2215R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! HAT2215R, HAT2215RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
www.DataSheet4U.com
REJ03G0486-0300
Rev.3.00
Dec.22.2004
Outline
SOP-8
2
G
78
DD
4
G
S1
MOS1
56
DD
S3
MOS2
8 7 65
1 234
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
HAT2215R
HAT2215RJ
Drain to source voltage
Gate to source voltage
VDSS
VGSS
80
±20
80
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
3.4
20.4
3.4
20.4
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 2
EAR Note 2
Pch Note3
Pch Note4
3.4
—
—
1.5
2.2
3.4
3.4
1.54
1.5
2.2
Channel temperature Tch 150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
4. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
W
°C
°C
Rev.3.00 Dec. 22, 2004 page 1 of 7
1 page HAT2215R, HAT2215RJ
Reverse Drain Current vs.
Source to Drain Voltage
10
10 V
VGS = 0 V, –5 V
5 5V
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 30 V
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Maximum Avalanche Energy vs.
Channel Temperature Derating
2.0
IAP = 3.4 A
1.6 VDD = 50 V
duty < 0.1 %
Rg > 50 Ω
1.2
0.8
0.4
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Switching Time Waveform
Vin 10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
Vin
10 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.3.00 Dec. 22, 2004 page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HAT2215R.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAT2215R | Silicon N Channel Power MOS FET High Speed Power Switching | Renesas Technology |
HAT2215RJ | Silicon N Channel Power MOS FET High Speed Power Switching | Renesas Technology |
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