HAT2210RJ Datasheet PDF - Renesas Technology
| Part Number | HAT2210RJ | |
| Description | Silicon N Channel Power MOS FET | |
| Manufacturers | Renesas Technology | |
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HAT2210R, HAT2210RJ
www.DataSheet4U.com
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G0578-0300
Rev.3.00
Mar.15.2005
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PRSP0008DD-A
(Package name: SOP-8<FP-8DA>)
78
DD
56
DD
24
GG
8 7 65
1 234
S
1
MOS1
S
3
MOS2 and
Schottky Barrier Diode
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Ratings
Item
Symbol
HAT2210R
HAT2210RJ
MOS1 MOS2 & SBD MOS1 MOS2 & SBD
Drain to source voltage
VDSS
30
30
30
30
Gate to source voltage
VGSS
±20
±12
±20
±12
Drain current
ID 7.5 8.0 7.5 8.0
Drain peak current
ID(pulse)Note1
60
64
60
64
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note 2
EAR Note 2
Pch Note3
7.5
—
—
1.5
8.0 7.5 8.0
— 7.5 8.0
— 5.62 6.4
1.5 1.5 1.5
Channel temperature
Tch 150 150 150 150
Storage temperature
Tstg –55 to +150 –55 to +150 –55 to +150 –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.3.00, Mar.15.2005, page 1 of 11
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HAT2210R, HAT2210RJ
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
5A
ID = 1 A, 2 A
40
30 VGS = 4.5 V
20
10 V
10
1 A, 2 A, 5 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
5
2 di / dt = 100 A / µs
1 VGS = 0, Ta = 25°C
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
ID = 7.5 A
VDD = 25 V
40 10 V
5V
30 VDS
VGS
20
16
12
20 8
10 VDD = 25 V
10 V
4
5V 0
0 4 8 12 16 20
Gate Charge Qg (nC)
Forward Transfer Admwiwttwan.DceatvasS.heet4U.com
Drain Current
100
50
Tc = –25°C
20
10
5
25°C
2
1 75°C
0.5
0.2
0.1
0.1 0.2 0.5 1 2
VDS = 10 V
Pulse Test
5 10 20 50 100
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
VGS = 0
f = 1 MHz
2000
1000
500
Ciss
200 Coss
100
Crss
50
20
10
0 5 10 15 20 25 30
Drain to Source Voltage VDS (V)
Switching Characteristics
100
50 td(off) tr
20
10
td(on)
5
tf
2 VGS = 10 V, VDD = 10 V
Rg =4.7 Ω, duty ≤ 1 %
1
0.1 0.2 0.5 1 2 5 10 20
Drain Current ID (A)
50 100
Rev.3.00, Mar.15.2005, page 5 of 11
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HAT2210RJ electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ HAT2210RJ.PDF Datasheet ] | |
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