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Número de pieza | HAT2208R | |
Descripción | Silicon N Channel Power MOS FET Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT2208R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! HAT2208R
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 19.0 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
www.DataSheet4U.com
REJ03G1595-0200
Rev.2.00
Oct 15, 2007
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse) Note1
9
72
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-a Note3
9
9
8.1
2.0
62.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1595-0200 Rev.2.00 Oct 15, 2007
Page 1 of 7
1 page HAT2208R
10
8
6
Reverse Drain Current vs.
Source to Drain Voltage
10 V
5V
VGS = 0 V
Maximum Avalanchwe wEwne.DrgaytavSsh.eet4U.com
Channel Temperature Derating
20
IAP = 9 A
16 VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
12
48
2
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
4
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.001
0.01
1shot pulse
θch - f(t) = γs (t) x θch - f
θch - f = 100°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
D=
PW
T
0.0001
10 µ
100 µ
1 m 10 m 100 m
1
PW
T
10 100
1000 10000
Pulse Width PW (s)
Avalanche Test Circuit
Vin
15 V
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
VDSS
L • IAP2 • VDSS - VDD
IAP
ID
V(BR)DSS
VDS
0 VDD
REJ03G1595-0200 Rev.2.00 Oct 15, 2007
Page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HAT2208R.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAT2208R | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
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