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Renesas Technology - Silicon N Channel Power MOS FET Power Switching

Numéro de référence HAT2203C
Description Silicon N Channel Power MOS FET Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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HAT2203C fiche technique
HAT2203C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 69 mtyp.(at VGS = 4.5 V)
Low drive current
High density mounting
2.5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
Index
band
5
4
6
3
2
1
234 5
DDD D
6
G
S
1
www.DataSheet4U.com
REJ03G0447-0400
Rev.4.00
May 19.2005
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to Source voltage
VDSS
Gate to Source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - Drain diode reverse Drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
Ratings
20
±12
2
8
2
830
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.4.00 May.19, 2005 page 1 of 6

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