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PDF IRF6655RPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6655RPBF | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97226A
IRF6655PbF
l RoHs Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Ideal for Control FET sockets in 36V-75V in
Synchronous Buck applications
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
IRF6655TRPbFwww.DataSheet4U.com
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V max ±20V max
53mΩ@ 10V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
8.7nC 2.8nC 0.58nC 37nC 4.5nC 4.0V
SH DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST SH MQ MX MT MN
Description
The IRF6655PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655PbF is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets
in non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
200
180 ID = 5.0A
160
140
120
100
TJ = 125°C
80
60
40
20
TJ = 25°C
0
4 6 8 10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Max.
100
±20
4.2
3.4
19
34
11
5.0
Units
V
A
mJ
A
12.0
10.0
ID= 5.0A
VDS= 80V
VDS= 50V
8.0 VDS= 20V
6.0
4.0
2.0
0.0
0
2468
QG Total Gate Charge (nC)
10
Fig 2. Typical On-Resistance Vs. Gate Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A.
1
08/25/06
1 page  
100
10
TJ = -40°C
TJ = 25°C
TJ = 150°C
VGS = 0V
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
5
4
3
2
1
0
25 50 75 100 125 150
TA , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
50
40
30
1000
100
IRF6655PbF
www.DataSheet4U.com
Tc = 25°C
Tj = 175°C
Single Pulse
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µsec
1
100msec
1msec
10msec
0.1
0.01
0
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
5.5
5
4.5
4
3.5
ID = 25µA
3 ID = 250µA
ID = 1.0mA
2.5 ID = 1.0A
2
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
ID
TOP 0.86A
1.3A
BOTTOM 5.0A
20
10
www.irf.com
0
25 50 75 100 125
Starting T J , Junction Temperature (°C)
150
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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| PDF Descargar | [ Datasheet IRF6655RPBF.PDF ] | |
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