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PDF IRF6655 Data sheet ( Hoja de datos )
| Número de pieza | IRF6655 | |
| Descripción | DirectFET Power MOSFET Typical values | |
| Fabricantes | International Rectifier | |
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l RoHS compliant containing no lead or bromide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Ideal for Control FET sockets in 36V – 75V in
Synchronous Buck applications
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques
PD - 96926D
IRF6655www.DataSheet4U.com
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V max ±20V max 53mΩ@ 10V
Qg tot
Qgd
Vgs(th)
8.7nC
2.8nC
3.9V
SH DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST SH MQ MX MT MN
Description
The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655 is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in
non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
100 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
kContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
fSingle Pulse Avalanche Energy
ÃeAvalanche Current
±20
4.2
3.4 A
19
34
11 mJ
5.0 A
200
180 ID = 5.0A
160
140
120
100
TJ = 125°C
80
60
40
20
TJ = 25°C
0
4 6 8 10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
12.0
10.0
ID= 5.0A
VDS= 80V
VDS= 50V
8.0 VDS= 20V
6.0
4.0
2.0
0.0
0
2468
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance Vs. Gate Voltage
10
Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
1
11/16/05
1 page  
100
10
TJ = -40°C
TJ = 25°C
TJ = 150°C
VGS = 0V
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
5
4
3
2
1
0
25 50 75 100 125 150
TA , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
50
40
30
1000
100
Tc = 25°C
Tj = 175°C
Single Pulse
IRF6655
www.DataSheet4U.com
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µsec
1
100msec
1msec
10msec
0.1
0.01
0
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
5.5
5
4.5
4
3.5
ID = 25µA
3 ID = 250µA
ID = 1.0mA
2.5 ID = 1.0A
2
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
ID
TOP 0.86A
1.3A
BOTTOM 5.0A
20
10
www.irf.com
0
25 50 75 100 125
Starting T J , Junction Temperature (°C)
150
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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| PDF Descargar | [ Datasheet IRF6655.PDF ] | |
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