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DIM800XSM33-F000 fiches techniques PDF

Dynex Semiconductor - Single Switch IGBT Module

Numéro de référence DIM800XSM33-F000
Description Single Switch IGBT Module
Fabricant Dynex Semiconductor 
Logo Dynex Semiconductor 





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DIM800XSM33-F000 fiche technique
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FEATURES
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
High Thermal Cycling Capability
10µs Short Circuit Withstand
Lead Free construction
10.2kV isolation
Single Switch IGBT Module
PDS5906 1.2 January 2009(LN26569)
KEY PARAMETERS
V CES
V CE(sat) *
(typ)
I C (max)
I C(PK)
(max)
*(measured at the auxiliary terminals)
3300V
2.8V
800A
1600A
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V
to 6500V and currents up to 3600A.
The DIM800XSM33-F000 is a single switch 3300V,
soft punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus 10us short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800XSM33-F000
Note: When ordering, please use the complete part
number
Fig. 1 Circuit configuration
Outline type code: X
(See Fig. 11 for further information)
Fig. 2 Package
1/8ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

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