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PDF HMC451 Data sheet ( Hoja de datos )
| Número de pieza | HMC451 | |
| Descripción | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER 5.0 - 20.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.0305
HMC451
www.DataSheet4U.com
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.0 - 20.0 GHz
1
Typical Applications
Features
The HMC451 is ideal for use as a driver amplifier for:
Gain: 22 dB
• Point-to-Point Radios
Saturated Output Power: +22 dBm @ 24% PAE
• Point-to-Multi-Point Radios & VSAT
Output IP3: +30 dBm
• Test Equipment & Sensors
Single Positive Supply: +5.0 V @ 127 mA
• LO Driver for HMC Mixers
50 Ohm Matched Input/Output
• Military & Space
Small Size: 1.35 mm x 1.35 mm x 0.1 mm
Functional Diagram
General Description
The HMC451 is a general purpose GaAs PHEMT
MMIC Medium Power Amplifier which operates
between 5.0 and 20.0 GHz. The amplifier provides
22 dB of gain, +22 dBm of saturated power and 24%
PAE from a +5.0 V supply. Consistent gain and output
power across the operating band make it possible to
use a common driver/LO amplifier approach in mul-
tiple radio bands. The HMC451 amplifier can easily
be integrated into Multi-Chip-Modules (MCMs) due
to its small (1.82mm2) size, single supply operation
and DC blocked I/Os. All data is tested with the chip
in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length <0.31mm
(<12 mils).
Electrical Specifications, TA = +25° C, Vdd1, Vdd2 = +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
Min.
19
17
Typ.
5 - 15
22
0.03
14
16
20
22
32
7
127
Max.
0.04
Min.
17
17
Typ.
15 - 18
20
0.03
11
11
20
21
30
6
127
Max.
0.04
Min.
15
17
Typ.
18 - 20
18
0.03
8
8
Max.
0.04
20
21
30
6.5
127
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
1 - 78
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
1
Outline Drawing
v00.0305
HMC451
www.DataSheet4U.com
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.0 - 20.0 GHz
Die Packaging Information [1]
Standard
Alternate
GP-2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
Pad Descriptions
Pad Number
Function
1 RF IN
Description
This pad is AC coupled and matched to 50 Ohms from
5 - 20 GHz.
Interface Schematic
2, 3
Vdd1, Vdd2
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
1 - 82
4
RF OUT
This pad is AC coupled and matched to 50 Ohms from
5 - 20 GHz.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC451.PDF ] | |
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