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PDF HMC450QS16G Data sheet ( Hoja de datos )
| Número de pieza | HMC450QS16G | |
| Descripción | GaAs InGaP HBT MMIC POWER AMPLIFIER 0.8 - 1.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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HMC450QS16G / 450QS16GE
www.DataSheet4U.com
v02.0406
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
5
Typical Applications
Features
The HMC450QS16G / HMC450QS16GE is ideal for
power and driver amplifier applications:
• GSM, GPRS, & Edge
• CDMA & WCDMA
• Base Stations & Repeaters
Gain: 26 dB
32% PAE @ 28.5 dBm Output Power
+40 dBm Output IP3
Integrated Power Control (Vpd)
Included in the HMC-DK002 Designer’s Kit
Functional Diagram
General Description
The HMC450QS16G & HMC450QS16GE are high
efficiency GaAs InGaP HBT Medium Power MMIC
amplifiers operating between 800 and 1000 MHz.
The amplifier is packaged in a low cost, surface
mount 16 lead package and offers the same pinout
and functionality as the higher band HMC413QS16G
1.6-2.3 GHz PA. With a minimum of external
components, the amplifier provides 26 dB of gain,
+40 dBm OIP3 and +28.5 dBm of saturated power
from a +5.0V supply voltage. The integrated power
control (Vpd) can be used for full power down or RF
output power/current control. The combination of high
gain and high output IP3 make the HMC450QS16G
& HMC450QS16GE ideal linear drivers for Cellular,
PCS & 3G applications.
5 - 238
Electrical Specifications, TA = +25° C, Vs = +5V, Vpd = +4V [1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Min. Typ. Max.
0.8 - 1.0
23 26
0.015
0.025
17
13
Units
GHz
dB
dB/°C
dB
dB
Output Power for 1 dB Compression (P1dB)
23 26
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3) [2]
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
37
tON, tOFF
28.5
40
8
310
12
10
dBm
dBm
dB
mA
mA
ns
[1] Specifications and data reflect HMC450QS16G measured using the application circuit found herein. Contact the HMC Applications Group for
assistance in optimizing performance for your application.
[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v02.0406
HMC450QS16G / 450QS16GE
www.DataSheet4U.com
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
5
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd1, Vpd2)
RF Input Power (RFin)(Vs = +5.0
Vdc, VPD = +4.0 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 28 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
+5.0 Vdc
+10 dBm
150 °C
1.86 W
35 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current
vs. Supply Voltage
Vs (V)
Icq (mA)
4.75
300
5.0 310
5.25
325
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
5 - 242
Package Information
Part Number
Package Body Material
HMC450QS16G
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC450QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H450
XXXX
H450
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC450QS16G.PDF ] | |
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