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PDF VN920PEP-E Data sheet ( Hoja de datos )
| Número de pieza | VN920PEP-E | |
| Descripción | SINGLE CHANNEL HIGH SIDE DRIVER | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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VN920PEP-E
SINGLE CHANNEL HIGH SIDE DRIVER
Table 1. General Features
TYPE
RDS(on)
VN920PEP-E
15mΩ
IOUT
30 A
VCC
36 V
I CMOS COMPATIBLE INPUT
I PROPORTIONAL LOAD CURRENT SENSE
I SHORTED LOAD PROTECTION
I UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
I OVERVOLTAGE CLAMP
I THERMAL SHUTDOWN
I CURRENT LIMITATION
I PROTECTION AGAINST LOSS OF GROUND
AND LOSS VCC
I VERY LOW STAND-BY POWER DISSIPATION
I REVERSE BATTERY PROTECTION (*)
I IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
Figure 1. Package
PowerSSO-24™
DESCRIPTION
The VN920PEP-E is a monolithic device designed
in STMicroelectronics VIPower M0-3 Technology,
intended for driving any kind of load with one side
connected to ground. Active VCC pin voltage
clamp protects the device against low energy
spikes (see ISO7637 transient compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload. The device integrates an analog
current sense output which delivers a current
proportional to the load current. Device
automatically turns off in case of ground pin
disconnection.
Table 2. Order Codes
Package
PowerSSO-24
Note: (*) See application schematic at page 10
Tube
VN920PEP-E
Tape and Reel
VN920PEPTR-E
March 2005
Rev. 5
1/18
1 page  
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VN920PEP-E
ELECTRICAL CHARACTERISTICS (continued)
Table 8. Current Sense (9V≤VCC≤16V) (See figure 5)
Symbol
Parameter
Test Conditions
K1
dK1/K1
IOUT/ISENSE
Current Sense Ratio Drift
IOUT=1A; VSENSE=0.5V;
Tj= -40°C...150°C
IOUT=1A; VSENSE=0.5V;
Tj= -40°C...+150°C
K2 IOUT/ISENSE
IOUT=10A; VSENSE=4V; Tj=-40°C
Tj=25°C...150°C
dK2/K2
K3
Current Sense Ratio Drift
IOUT/ISENSE
IOUT=10A; VSENSE=4V;
Tj=-40°C...+150°C
IOUT=30A; VSENSE=4V; Tj=-40°C
Tj=25°C...150°C
dK3/K3
Current Sense Ratio Drift IOUT=30A; VSENSE=4V;
Tj=-40°C...+150°C
ISENSEO
Analog Sense Leakage
Current
VCC=6...16V; IOUT=0A;VSENSE=0V;
Tj=-40°C...+150°C
VSENSE
VSENSEH
Max Analog Sense Output
Voltage
Sense Voltage in
Overtemperature
conditions
VCC=5.5V; IOUT=5A; RSENSE=10KΩ
VCC>8V; IOUT=10A; RSENSE=10KΩ
VCC=13V; RSENSE=3.9KΩ
RVSENSEH
Analog sense output
impedance in
overtemperature
condition
VCC=13V; Tj>TTSD; Output Open
tDSENSE
Current sense delay
response
to 90% ISENSE (see note 2)
Note: 2. Current sense signal delay after positive input slope
Min
3300
Typ
4400
Max Unit
6000
-10
4200
4400
-8
4200
4400
-6
4900
4900
4900
4900
+10
6000
5750
+8
5500
5250
+6
%
%
%
0 10 µA
2
4
5.5
V
V
V
400 Ω
500 µs
Table 9. Protections (See note 3)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
TTSD
TR
Thyst
Shut-down Temperature
Reset Temperature
Thermal Hysteresis
150 175 200 °C
135 °C
7 15
°C
Ilim
DC Short Circuit Current
VCC=13V
5V<VCC<36V
30 45 75 A
75 A
Vdemag
Turn-off Output Clamp
Voltage
IOUT=2A; VIN=0V; L=6mH
VCC-41 VCC-48 VCC-55 V
VON
Output Voltage Drop
Limitation
IOUT=1A; Tj=-40°C....+150°C
50 mV
Note: 3. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles.
5/18
5 Page 
Figure 10. Off State Output Current
Il (off1) (µA)
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Figure 12. Input Clamp Voltage
Vicl (V)
10
9.5
Iin=1mA
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
-50 -25 0 25
50 75
Tc (°C)
100 125 150 175
Figure 13. Input Low Level
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
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VN920PEP-E
Figure 11. High Level Input Current
Iih (uA)
5
4.5
Vin=3.25V
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25
50 75
Tc (°C)
100 125 150 175
Figure 14. Input High Level
Vih (V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Figure 15. Input Hysteresis Voltage
Vhyst (V)
16
14
12
10
8
6
4
2
0
-50 -25
0
25 50 75 100 125 150 175
Tc (°C)
11/18
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