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PDF NTUD3127C Data sheet ( Hoja de datos )
| Número de pieza | NTUD3127C | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | ON Semiconductor | |
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NTUD3127C
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Small Signal MOSFET
20 V, 200 mA / −180 mA, Complementary,
1.0 x 1.0 mm SOT−963 Package
Features
• Complementary MOSFET Device
• 1.5 V Gate Voltage Rating
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
• These are Pb−Free Devices
Applications
• Load Switch with Level Shift
• Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel
Continuous Drain
Current (Note 1)
Steady
State
tv5s
P−Channel
Continuous Drain
Current (Note 1)
Steady
State
tv5s
Power Dissipation
(Note 1)
Steady
State
tv5s
Pulsed Drain Current N−Channel
P−Channel
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
tp = 10 ms
VDSS
VGS
ID
PD
IDM
20
±8
160
115
200
−140
−100
−180
125
200
800
−600
V
V
mA
mW
mA
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TJ,
TSTG
IS
TL
−55 to
150
200
260
°C
mA
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz. Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
http://onsemi.com
V(BR)DSS
P−Channel
−20 V
N−Channel
20 V
RDS(on) Max
5.0 W @ −4.5 V
7.0 W @ −2.5 V
10 W @ −1.8 V
14 W @ −1.5 V
3.0 W @ 4.5 V
4.0 W @ 2.5 V
6.0 W @ 1.8 V
10 W @ 1.5 V
ID Max
−0.18 A
0.20 A
PINOUT: SOT−963
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
MARKING
DIAGRAM
SOT−963
CASE 527AA
SM
1
S = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTUD3127CT5G SOT−963 8000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 1
1
Publication Order Number:
NTUD3127C/D
1 page  
NTUD3127C
TYPICAL PERFORMANCE CURVES − N−CHANNEL
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15 1000
VGS = 0 V
VDD = 10 V
12
TJ = 25°C
ID = 200 mA
VGS = 4.5 V
Ciss 100
td(off)
9 tf
tr
6 10 td(on)
3 Coss
0 Crss
0 2 4 6 8 10 12 14 16 18 20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1
1
10
RG, GATE RESISTANCE (OHMS)
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
100
0.2
0.15
VGS = 0 V
TJ = 25°C
0.1
0.05
0
0 0.2 0.4 0.6 0.8 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
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5
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| PDF Descargar | [ Datasheet NTUD3127C.PDF ] | |
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