|
|
PDF IRHMB58Z60 Data sheet ( Hoja de datos )
| Número de pieza | IRHMB58Z60 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRHMB58Z60 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PD-96973
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level
IRHMB57Z60 100K Rads (Si)
IRHMB53Z60 300K Rads (Si)
IRHMB54Z60 600K Rads (Si)
IRHMB58Z60 1000K Rads (Si)
RDS(on)
0.0045Ω
0.0045Ω
0.0045Ω
0.0045Ω
ID
45A*
45A*
45A*
45A*
IRHMB57Z60
30V, N-CHANNEL
5 TECHNOLOGY
Tabless
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
45*
45* A
180
208 W
1.67
W/°C
±20 V
1250
mJ
45 A
20.8
mJ
1.08
-55 to 150
V/ns
oC
300 (0.063 in. /1.6 mm from case for 10s)
8.0 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/08/05
1 page  
Pre-Irradiation
www.DataSheet4U.com
IRHMB57Z60
16000
14000
12000
VGS = 0V, f = 1 MH10z0KHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
8000
6000
Ciss
Coss
4000
2000
0
1
Crss
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID = 45A
16
VDS = 24V
VDS = 15V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200 240 280 320
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
TJ = 25°C
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
1
0.1
0.0
VGS = 0V
0.4 0.8 1.2
VSD , Source-to-Drain Voltage (V)
1.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10
01
10ms
10 100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHMB58Z60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRHMB58Z60 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |