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PDF IRHMB57064 Data sheet ( Hoja de datos )
| Número de pieza | IRHMB57064 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) | |
| Fabricantes | International Rectifier | |
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PD-96972
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB57064
60V, N-CHANNEL
5 TECHNOLOGY
Product Summary
Part Number
IRHMB57064
IRHMB53064
IRHMB54064
IRHMB58064
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
RDS(on)
0.006Ω
0.006Ω
0.006Ω
0.006Ω
ID
45A*
45A*
45A*
45A*
Tabless
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
45*
45* A
180
208 W
1.67
W/°C
±20 V
824 mJ
45 A
20 mJ
4.3
-55 to 150
V/ns
oC
300 (0.063 in. /1.6 mm from case for 10s)
8.0 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/08/05
1 page  
Pre-Irradiation
www.DataSheet4U.com
IRHMB57064
14000
12000
10000
VGS = 0V, f = 1 M1H0z0KHz
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
6000
4000
Ciss
Coss
2000
0
1
Crss
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID = 45A
16
12
VDS= 48V
VDS= 30V
VDS= 12V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 20 40 60 80 100 120 140 160
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD , Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
1ms
10
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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