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PDF 2SA1815 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1815 | |
| Descripción | PNP Epitaxial Planar Silicon Transistors | |
| Fabricantes | Guangdong Kexin Industrial | |
| Logotipo |  |
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TransistIoCrs
PNP Epitaxial Planar Silicon Transistors
2SA1815
Features
High power gain:PG=25dB typ(f=100MHz)
High cutoffrequency:fT=750MHz typ
Low collector-to-emitter saturation voltage
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-15
-12
-3
-50
250
150
-55 to +150
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output Capacitance
Reverse Transfer Capacitance
C-E Saturation Voltage
Power Gain
Symbol
Testconditons
IcBO VCB = -12V , IE = 0
IEBO VEB = -2V , IC = 0
hFE VCE = -10V , IC = -5mA
Ft VCE = -10V , IC = -5mA
Cob VCB=-10V,f=1MHz
Cob VCB=-10V,f=1MHz
VCE(sat) IC=-10mA,IB=-1mA
PG VCE=-10V,IC=-10mA,f=100MHz
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
60 270
750 MHz
1.2 1.6 pF
0.9 pF
-0.1 -0.3 V
25 dB
hFE Classification
Marking
Rank
hFE
3
60 to 120
JS
4
90 to 180
5
135 to 270
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