DataSheetWiki


NESG210719 fiches techniques PDF

NEC - NECs NPN SiGe TRANSISTOR

Numéro de référence NESG210719
Description NECs NPN SiGe TRANSISTOR
Fabricant NEC 
Logo NEC 





1 Page

No Preview Available !





NESG210719 fiche technique
PRELIMINARY DATA SHEET
www.DataSheet4U.com
NEC's NPN SiGe TRANSISTOR NESG210719
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
FEATURES
IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION
APPLICATIONS
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR
SiGe TRANSISTOR
3-PIN SUPER MINIMOLD (19) PACKAGE
ORDERING INFORMATION
PART NUMBER
NESG210719
NESG210719-T1
QUANTITY
50 pcs (Non reel)
3 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales ofce.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
RATINGS
13.0
5.0
1.5
100
200
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
UNIT
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories

PagesPages 3
Télécharger [ NESG210719 ]


Fiche technique recommandé

No Description détaillée Fabricant
NESG210719 NECs NPN SiGe TRANSISTOR NEC
NEC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche