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RMPA0959 fiches techniques PDF

Fairchild Semiconductor - CDMA and CDMA2000-1X PowerEdge Power Amplifier Module

Numéro de référence RMPA0959
Description CDMA and CDMA2000-1X PowerEdge Power Amplifier Module
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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RMPA0959 fiche technique
www.DataSheet4U.com
March 2006
RMPA0959
CDMA and CDMA2000-1X PowerEdge™
Power Amplifier Module
Features
Single positive-supply operation with low power and shut-
down modes
39% CDMA efficiency at +28dBm average output power
53% AMPS mode efficiency at +31dBm output power
Lead-free RoHS compliant 4 x 4 x 1.5mm leadless
Internally matched to 50and DC blocked RF input/output
Meets CDMA2000-1XRTT performance requirements
General Description
The RMPA0959 power amplifier module (PAM) is designed for
cellular band AMPS, CDMA and CDMA2000-1X applications.
The 2 stage PAM is internally matched to 50to minimize the
use of external components and features a low-power mode to
reduce standby current and DC power consumption during peak
phone usage. High power-added efficiency and excellent linear-
ity are achieved using our Heterojunction Bipolar Transistor
(HBT) process.
Device
Functional Block Diagram
Vcc1
(5)
PA MODULE
COLLECTOR
BIAS 1
GND
(3, 7, 9,10,11)
RF IN
(4)
Vref
(1)
INPUT
MATCHING
NETWORK
INTERSTAGE
MATCH
INPUT
STAGE MMIC
OUTPUT
STAGE
INPUT STAGE
BIAS
OUTPUT STAGE
BIAS
OUTPUT
MATCHING
NETWORK
RF OUT
(8)
VCC=3.4V (nom)
VREF=2.85V (nom)
824-849 MHz
50I/O
BIAS CONTROL
COLLECTOR
BIAS 2
Vcc2
(6)
Vmode (2)
©2006 Fairchild Semiconductor Corporation
RMPA0959 Rev. F
1
www.fairchildsemi.com

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