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What is K4S643233F-SDE?

This electronic component, produced by the manufacturer "Samsung semiconductor", performs the same function as "2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM".


K4S643233F-SDE Datasheet PDF - Samsung semiconductor

Part Number K4S643233F-SDE
Description 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
Manufacturers Samsung semiconductor 
Logo Samsung semiconductor Logo 


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K4S643233F-S(D)E/N/I/P
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CMOS SDRAM
2Mx32
Mobile SDRAM
90FBGA
(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)
Revision 1.5
December 2002
Rev. 1.5 Dec. 2002

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K4S643233F-SDE equivalent
K4S643233F-S(D)E/N/I/P
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CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C to 85 °C for Extended, -40 °C to 85°C for Industrial)
Parameter
Operating Current
(One Bank Active)
Symbol
Test Condition
IC C 1
Burst length = 1
tRC tR C(min)
IO = 0 mA
Version
Unit Note
-75 -1H -1L
80 75 75 mA 1
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
ICC2P CKE VIL(max), t CC = 10ns
ICC2 PS CKE & CLK VIL(max), tCC =
IC C 2N
CKE VIH(min), CS VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
I C C 2NS
CKE VIH(min), CLK VIL(max), tCC =
Input signals are stable
0.5
0.5
11
8
mA
mA
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3P CKE VIL(max), t CC = 10ns
ICC3 PS CKE & CLK VIL(max), tCC =
IC C 3N
CKE VIH(min), CS VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
I C C 3NS
CKE VIH(min), CLK VIL(max), tCC =
Input signals are stable
5
5
22
22
mA
mA
mA
Operating Current
ICC4 IO = 0 mA ,Page burst
95 75 75 mA 1
Refresh Current
ICC5 tRC tRC (min)
135 120 120 mA 2
Self Refresh Current
ICC6 CKE 0.2V
-S(D)E/I
-S(D)N/P
2
0.4
3
mA
4
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S643233F-S(D)E/I**
4. K4S643233F-S(D)N/P**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Rev. 1.5 Dec. 2002


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K4S643233F-SDE electronic component.


Information Total 8 Pages
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Featured Datasheets

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K4S643233F-SDEThe function is 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM. Samsung semiconductorSamsung semiconductor
K4S643233F-SDIThe function is 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM. Samsung semiconductorSamsung semiconductor
K4S643233F-SDNThe function is 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM. Samsung semiconductorSamsung semiconductor

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