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PDF K6T1008U2C Data sheet ( Hoja de datos )
| Número de pieza | K6T1008U2C | |
| Descripción | 128K x8 bit Low Power and Low Voltage CMOS Static RAM | |
| Fabricantes | Samsung semiconductor | |
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K6T1008V2C, K6T1008U2C Family
Document Title
128K x8 bit Low Power and Low Voltage CMOS Static RAM
CMwOwwS.DaStaRSheAetM4U.com
Revision History
Revision No. History
0.0 Initial draft
1.0 Finalize
- Increased ISB, IDR
Commercial part = 10µA
Industrial part = 20µA
2.0 Revise
- Change speed bin
KM68V1000C Family: 70/85ns → 70/100ns
KM68U1000C Family: 70/100ns → 85/100ns
- Improved operating current: 40mA → 35mA
- Improved power dissipation
PD: 0.7W → 1.0W
- Improved standby current
Extended/Industrial: 20 → 10µA
- VIL: 0.4V → 0.6V
Draft Data
July 3, 1996
Remark
Preliminary
December 16, 1996 Final
November 25, 1997 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 2.0
November 1997
1 page  
K6T1008V2C, K6T1008U2C Family
CMwOwwS.DaStaSRheAetM4U.com
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): CL=100pF+1TTL
CL1)
1. Including scope and jig capacitance
AC CHARACTERISTICS (Commercial product:TA=0 to 70°C, Extended product:TA=-25 to 85°C, Industrial product: TA=-40 to 85°C
K6T1008V2C Family: Vcc=3.0~3.6V, K6T1008U2C Family: Vcc=2.7~3.3V)
Parameter List
Read
Write
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Symbol
tRC
tAA
tCO1, tCO2
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tWP
tWR
tWHZ
tDW
tDH
tOW
70ns
Min Max
70 -
- 70
- 70
- 35
10 -
5-
0 25
0 25
10 -
70 -
60 -
0-
60 -
55 -
0-
0 25
30 -
0-
5-
Speed Bins
85ns
Min Max
85 -
- 85
- 85
- 40
10 -
5-
0 25
0 25
15 -
85 -
70 -
0-
70 -
60 -
0-
0 30
35 -
0-
5-
100ns
Min Max
100 -
- 100
- 100
- 50
10 -
5-
0 30
0 30
15 -
100 -
80 -
0-
80 -
70 -
0-
0 30
40 -
0-
5-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition1)
Min Typ Max Unit
Vcc for data retention
VDR CS11)≥Vcc-0.2V
2.0 - 3.6 V
Data retention current
IDR Vcc=3.0V, CS1≥Vcc-0.2V, CS2≥VCC-0.2V, or CS2≤0.2V - 0.3 5 µA
Data retention set-up time
tSDR
Recovery time
tRDR
1. CS1≥Vcc-0.2V, CS2≥VCC-0.2V, or CS2≤0.2V
See data retention waveform
0- -
ms
5- -
5 Revision 2.0
November 1997
5 Page 
K6T1008V2C, K6T1008U2C Family
PACKAGE DIMENSIONS
32 PIN THIN SMALL OUTLINE PACKAGE TYPE I (0820F)
0.20
+0.10
-0.05
0.008+-00.0.00024
#1
20.00±0.20
0.787±0.008
0.50
0.0197
#16
0.25
0.010
TYP
0~8°
0.45 ~0.75
0.018 ~0.030
18.40±0.10
0.724±0.004
32 PIN THIN SMALL OUTLINE PACKAGE TYPE I (0820R)
0.20
+0.10
-0.05
0.008+-00..000024
#16
20.00±0.20
0.787±0.008
0.50
0.0197
#1
0.25
0.010
TYP
0~8°
0.45 ~0.75
0.018 ~0.030
18.40±0.10
0.724±0.004
11
CMwOwwS.DaStaRSheAetM4U.com
Units: millimeter(inch)
#32
8.40
0.331
MAX
(
0.25
0.010
)
#17
1.00±0.10
0.039±0.004
1.20
0.047
MAX
0.15
+0.10
-0.05
0.006+-00.0.00024
0.05
0.002
MIN
(
0.50
0.020
)
#17
( 0.25 )
0.010
#32
1.00±0.10
0.039±0.004
01..02407 MAX
0.15
+0.10
-0.05
0.006
+0.004
-0.002
0.05
0.002
MIN
(
0.50
0.020
)
Revision 2.0
November 1997
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet K6T1008U2C.PDF ] | |
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