|
|
PDF EBE20RE4AAFA Data sheet ( Hoja de datos )
| Número de pieza | EBE20RE4AAFA | |
| Descripción | 2GB Registered DDR2 SDRAM DIMM | |
| Fabricantes | Elpida Memory | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EBE20RE4AAFA (archivo pdf) en la parte inferior de esta página. Total 22 Páginas | ||
|
No Preview Available !
DATA SHEET
www.DataSheet4U.com
2GB Registered DDR2 SDRAM DIMM
EBE20RE4AAFA (256M words × 72 bits, 1 Rank)
Description
Features
The EBE20RE4AAFA is a 256M words × 72 bits, 1
rank DDR2 SDRAM Module, mounting 18 pieces of
DDR2 SDRAM sealed in FBGA (µBGA) package.
Read and write operations are performed at the cross
points of the CK and the /CK. This high-speed data
transfer is realized by the 4bits prefetch-pipelined
architecture. Data strobe (DQS and /DQS) both for
read and write are available for high speed and reliable
data bus design. By setting extended mode register,
the on-chip Delay Locked Loop (DLL) can be set
enable or disable. This module provides high density
mounting without utilizing surface mount technology.
Decoupling capacitors are mounted beside each FBGA
(µBGA) on the module board.
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
• 240-pin socket type dual in line memory module
(DIMM)
PCB height: 30.0mm
Lead pitch: 1.0mm
Lead-free
• Power supply: VDD, VDDQ = 1.8V ± 0.1V
• Data rate: 533Mbps/400Mbps (max.)
• SSTL_18 compatible I/O
• Double-data-rate architecture: two data transfers per
clock cycle
• Bi-directional, data strobe (DQS and /DQS) is
transmitted /received with data, to be used in
capturing data at the receiver
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
referenced to both edges of DQS
• Eight internal banks for concurrent operation
(Component)
• Burst length: 4, 8
• /CAS latency (CL): 3, 4, 5
• Auto precharge option for each burst access
• Auto refresh and self refresh modes
• Average refresh period
7.8µs at 0°C ≤ TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
• Posted CAS by programmable additive latency for
better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe
operation
• 1 piece of PLL clock driver, 2 pieces of register driver
and 1 piece of serial EEPROM (2k bits EEPROM) for
Presence Detect (PD)
Document No. E0440E30 (Ver. 3.0)
Date Published March 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2003-2005
1 page  
EBE20RE4AAFA
Serial PD Matrix*1
www.DataSheet4U.com
Byte No.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Number of bytes utilized by module
manufacturer
1
0
0
0
0
0
0
0
80H
Total number of bytes in serial PD
device
0 0 0 0 1 0 0 0 08H
Memory type
0 0 0 0 1 0 0 0 08H
Number of row address
0 0 0 0 1 1 1 0 0EH
Number of column address
0 0 0 0 1 0 1 1 0BH
Number of DIMM ranks
0 1 1 0 0 0 0 0 60H
Module data width
0 1 0 0 1 0 0 0 48H
Module data width continuation
0 0 0 0 0 0 0 0 00H
Voltage interface level of this assembly 0 0 0 0 0 1 0 1 05H
DDR SDRAM cycle time, CL = 5
-5C
0 0 1 1 1 1 0 1 3DH
-4A 0 1 0 1 0 0 0 0 50H
SDRAM access from clock (tAC)
-5C
0 1 0 1 0 0 0 0 50H
-4A 0 1 1 0 0 0 0 0 60H
DIMM configuration type
0 0 0 0 0 0 1 0 02H
Refresh rate/type
1 0 0 0 0 0 1 0 82H
Primary SDRAM width
0 0 0 0 0 1 0 0 04H
Error checking SDRAM width
0 0 0 0 0 1 0 0 04H
Reserved
0 0 0 0 0 0 0 0 00H
SDRAM device attributes:
Burst length supported
0 0 0 0 1 1 0 0 0CH
SDRAM device attributes: Number of
banks on SDRAM device
0
0
0
0
1
0
0
0
08H
SDRAM device attributes:
/CAS latency
0 0 1 1 1 0 0 0 38H
Reserved
0 0 0 0 0 0 0 0 00H
DIMM type information
0 0 0 0 0 0 0 1 01H
SDRAM module attributes
0 0 0 0 0 0 0 0 00H
SDRAM device attributes: General 0 0 1 1 0 0 0 0 30H
Minimum clock cycle time at CL = 4
0 0 1 1 1 1 0 1 3DH
-5C
-4A 0 1 0 1 0 0 0 0 50H
Maximum data access time (tAC) from
clock at CL = 4
0 1 0 1 0 0 0 0 50H
-5C
-4A 0 1 1 0 0 0 0 0 60H
Minimum clock cycle time at CL = 3 0 1 0 1 0 0 0 0 50H
Maximum data access time (tAC) from
clock at CL = 3
0
1
1
0
0
0
0
0
60H
Comments
128 bytes
256 bytes
DDR2 SDRAM
14
11
1
72
0
SSTL 1.8V
3.75ns*1
5.0ns*1
0.5ns*1
0.6ns*1
ECC
7.8µs
×4
×4
0
4,8
8
3, 4, 5
0
Registered
Normal
VDD ± 0.1V
3.75ns*1
5.0ns*1
0.5ns*1
0.6ns*1
5.0ns*1
0.6ns*1
Data Sheet E0440E30 (Ver. 3.0)
5
5 Page 
EBE20RE4AAFA
DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V)
www.DataSheet4U.com
Parameter
Operating current
(ACT-PRE)
Symbol Grade max.
IDD0
-5C TBD
-4A 2210
Operating current
(ACT-READ-PRE)
IDD1
-5C TBD
-4A 2430
Precharge power-down
standby current
IDD2P
-5C
-4A
TBD
690
Precharge quiet standby
current
IDD2Q
-5C
-4A
TBD
1110
Idle standby current
IDD2N
-5C
-4A
TBD
1290
Active power-down
standby current
IDD3P-F
-5C
-4A
IDD3P-S
-5C
-4A
TBD
1290
TBD
840
Active standby current IDD3N
-5C
-4A
TBD
2120
Operating current
IDD4R
(Burst read operating)
-5C
-4A
TBD
3960
Operating current
IDD4W
(Burst write operating)
-5C
-4A
TBD
3960
Unit Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
mA CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
mA tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
mA CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
mA CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
mA CKE is H, /CS is H;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open;
mA
tCK = tCK (IDD);
CKE is L;
Fast PDN Exit
MRS(12) = 0
Other control and
address bus inputs
mA
are STABLE;
Slow PDN Exit
Data bus inputs are MRS(12) = 1
FLOATING
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
mA CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
mA
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
mA
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Data Sheet E0440E30 (Ver. 3.0)
11
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet EBE20RE4AAFA.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EBE20RE4AAFA | 2GB Registered DDR2 SDRAM DIMM | Elpida Memory |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |