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PDF EBE11UD8AGSA Data sheet ( Hoja de datos )
| Número de pieza | EBE11UD8AGSA | |
| Descripción | 1GB DDR2 SDRAM SO-DIMM | |
| Fabricantes | Elpida Memory | |
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DATA SHEET
www.DataSheet4U.com
1GB DDR2 SDRAM SO-DIMM
EBE11UD8AGSA (128M words × 64 bits, 2 Ranks)
Description
The EBE11UD8AGSA is 128M words × 64 bits, 2 ranks
DDR2 SDRAM Small Outline Dual In-line Memory
Module, mounting 16 pieces of 512M bits DDR2
SDRAM sealed in FBGA (µBGA) package. Read and
write operations are performed at the cross points of
the CK and the /CK. This high-speed data transfer is
realized by the 4 bits prefetch-pipelined architecture.
Data strobe (DQS and /DQS) both for read and write
are available for high speed and reliable data bus
design. By setting extended mode register, the on-chip
Delay Locked Loop (DLL) can be set enable or disable.
This module provides high density mounting without
utilizing surface mount technology. Decoupling
capacitors are mounted beside each FBGA (µBGA) on
the module board.
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
Features
• 200-pin socket type small outline dual in line memory
module (SO-DIMM)
PCB height: 30.0mm
Lead pitch: 0.6mm
Lead-free (RoHS compliant)
• Power supply: VDD = 1.8V ± 0.1V
• Data rate: 667Mbps/533Mbps (max.)
• SSTL_18 compatible I/O
• Double-data-rate architecture: two data transfers per
clock cycle
• Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
• DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
• Four internal banks for concurrent operation
(components)
• Data mask (DM) for write data
• Burst lengths: 4, 8
• /CAS Latency (CL): 3, 4, 5
• Auto precharge operation for each burst access
• Auto refresh and self refresh modes
• Average refresh period
7.8µs at 0°C ≤ TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
• Posted CAS by programmable additive latency for
better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe
operation
Document No. E0827E10 (Ver. 1.0)
Date Published October 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2005
1 page  
EBE11UD8AGSA
Serial PD Matrix
www.DataSheet4U.com
Byte No.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Function described
Number of bytes utilized by module
manufacturer
Total number of bytes in serial PD
device
Memory type
Hex
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 value
1 0 0 0 0 0 0 0 80H
0 0 0 0 1 0 0 0 08H
0 0 0 0 1 0 0 0 08H
Number of row address
0 0 0 0 1 1 1 0 0EH
Number of column address
0 0 0 0 1 0 1 0 0AH
Number of DIMM ranks
0 1 1 0 0 0 0 1 61H
Module data width
0 1 0 0 0 0 0 0 40H
Module data width continuation
0 0 0 0 0 0 0 0 00H
Voltage interface level of this assembly 0 0 0 0 0 1 0 1 05H
DDR SDRAM cycle time, CL = 5
-6E
0 0 1 1 0 0 0 0 30H
-5C 0 0 1 1 1 1 0 1 3DH
SDRAM access from clock (tAC)
-6E
0 1 0 0 0 1 0 1 45H
-5C 0 1 0 1 0 0 0 0 50H
DIMM configuration type
0 0 0 0 0 0 0 0 00H
Refresh rate/type
1 0 0 0 0 0 1 0 82H
Primary SDRAM width
0 0 0 0 1 0 0 0 08H
Error checking SDRAM width
0 0 0 0 0 0 0 0 00H
Reserved
0 0 0 0 0 0 0 0 00H
SDRAM device attributes:
Burst length supported
0 0 0 0 1 1 0 0 0CH
SDRAM device attributes: Number of
banks on SDRAM device
0
0
0
0
0
1
0
0
04H
SDRAM device attributes:
/CAS latency
0 0 1 1 1 0 0 0 38H
DIMM Mechanical Characteristics
0 0 0 0 0 0 0 1 01H
DIMM type information
0 0 0 0 0 1 0 0 04H
SDRAM module attributes
0 0 0 0 0 0 0 0 00H
22 SDRAM device attributes: General 0 0 0 0 0 0 1 1 03H
23 Minimum clock cycle time at CL = 4 0 0 1 1 1 1 0 1 3DH
24
Maximum data access time (tAC) from
clock at CL = 4
0
1
0
1
0
0
0
0
50H
25 Minimum clock cycle time at CL = 3 0 1 0 1 0 0 0 0 50H
26
Maximum data access time (tAC) from
clock at CL = 3
0
1
1
0
0
0
0
0
60H
27 Minimum row precharge time (tRP) 0 0 1 1 1 1 0 0 3CH
28
Minimum row active to row active
delay (tRRD)
0 0 0 1 1 1 1 0 1EH
29 Minimum /RAS to /CAS delay (tRCD) 0 0 1 1 1 1 0 0 3CH
30
Minimum active to precharge time
(tRAS)
0 0 1 0 1 1 0 1 2DH
31 Module rank density
1 0 0 0 0 0 0 0 80H
Comments
128 bytes
256 bytes
DDR2 SDRAM
14
10
2
64
0
SSTL 1.8V
3.0ns*1
3.75ns*1
0.45ns*1
0.5ns*1
None.
7.8µs
×8
None.
0
4,8
4
3, 4, 5
3.80mm max.
SO-DIMM
Normal
Weak Driver
50Ω ODT Support
3.75ns*1
0.5ns*1
5.0ns*1
0.6ns*1
15ns
7.5ns
15ns
45ns
512M bytes
Data Sheet E0827E10 (Ver. 1.0)
5
5 Page 
EBE11UD8AGSA
www.DataSheet4U.com
Parameter
Symbol Grade
max.
Unit Test condition
Auto-refresh current
(Another rank is in IDD2P)
IDD5
Auto-refresh current
(Another rank is in IDD3N)
IDD5
-6E
-5C
-6E
-5C
2240
2080
2720
2520
tCK = tCK (IDD);
mA Refresh command at every tRFC (IDD) interval;
CKE is H, /CS is H between valid commands;
mA Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Self-refresh current
IDD6
Self Refresh Mode;
CK and /CK at 0V;
96 mA CKE ≤ 0.2V;
Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
Operating current
(Bank interleaving)
IDD7
(Another rank is in IDD2P)
Operating current
(Bank interleaving)
IDD7
(Another rank is in IDD3N)
-6E
-5C
2640
3120
3080
all bank interleaving reads, IOUT = 0mA;
mA BL = 4, CL = CL(IDD), AL = tRCD (IDD) −1 × tCK (IDD);
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD),
tRCD = 1 × tCK (IDD);
CKE is H, CS is H between valid commands;
mA Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4W;
Notes: 1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by AC Input Test Condition.
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, /DQS, RDQS, /RDQS, LDQS, /LDQS, UDQS, and /UDQS. IDD
values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
L is defined as VIN ≤ VIL (AC) (max.)
H is defined as VIN ≥ VIH (AC) (min.)
STABLE is defined as inputs stable at an H or L level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between H and L every other clock cycle (once per two clocks) for address and control
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals
not including masks or strobes.
6. Refer to AC Timing for IDD Test Conditions.
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR2-667
DDR2-533
Parameter
5-5-5
4-4-4
CL(IDD)
5
4
tRCD(IDD)
15
15
tRC(IDD)
60
60
tRRD(IDD)
7.5
7.5
tCK(IDD)
3
3.75
tRAS(min.)(IDD)
45
45
tRAS(max.)(IDD)
70000
70000
tRP(IDD)
15
15
tRFC(IDD)
105
105
Unit
tCK
ns
ns
ns
ns
ns
ns
ns
ns
Data Sheet E0827E10 (Ver. 1.0)
11
11 Page | ||
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| PDF Descargar | [ Datasheet EBE11UD8AGSA.PDF ] | |
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