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PDF NTHD3100F Data sheet ( Hoja de datos )
| Número de pieza | NTHD3100F | |
| Descripción | Typical Uses for FETKY Devices | |
| Fabricantes | ON Semiconductor | |
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Typical Uses for FETKY® Devices
(MOSFET + Schottky Co-packaged)
Introduction
In consumer electronic circuits, Schottky diodes are often seen
working with power MOSFETs to implement system level power
solutions. There are different reasons for integrating a Schottky
diode with a MOSFET. Typical examples of these circuits include
reverse protection, asynchronous DC/DC conversion, free-wheeling
rectification, switching efficiency improvement, and more.
Examples
DC-DC Buck Circuit
A MOSFET plus a Schottky diode is the most typical buck converter
circuit seen throughout the portable electronics market. The Schottky
diode is used as a rectifying element closing the current loop after the
main switch turns off.
FETKY
L1
Vin Vout
C1
GND
Vin
ON/OFF
Q1 D1
FETKY
L1
DC-DC Buck Circuit
C2
GND
Vout
Li-Ion Charging Circuit
The FETCK1Y device can be usedFEQasT1KchYarginDg1elementsC2for multiple
pcoonwGneVNerciDnstioounr.cAesSOscNuh/coOhttFkFaysiscaprrebfeartrteedryocvhearDrag1esrt,awndaallrdchdaiorgdeerVG,boNoeuDrct aUuSsBe
onof rtmhealloCow1peerraVtfiorOantNsin./Og FreFsulting
in
mQini1mum
power
consumption
C2 R1
during
GND
Vin
FETKY
D1
GND
Vout
C1 ON/OFF
FETQK1Y
D1
C2 R1
GND
GND
Vin
Li-Ion Charging Circuit
Vout
C1
GND
Vin
FEQT1KY
ON/OFF
D1
C2 R1
GND
Vout
L1
Vin Vout
C1
GND
Vin
ON/OFF
C1
Vin
GND
C1
ON/OFF
ON/OFF
Q1 D1
C2
www.DataSheet4U.com
FETKY
GND
L1
Vout
FETKY
Q1 D1 D1
C2
Vout
Q1
GND
C2 R1
Protection Circuit
GND
FETKY
GND
The Schottky diode actually provides a by-pass channel and keeps
reverVseinvoltage across the MOSFET to lesDs1than a P-N diodeVodurot p.
C1 ON/OFF
FEDT1QK1Y
C2 R1
GVNinD
GVNoDut
C1
GND
ON/OFF
Q1
FETKY
D1
C2 R1
GND
Protection Circuit
SwiVticnhing Efficiency Improvement
Vout
ArecStcifVhyCioinn1tgtkMy OdSioFdEeT
time between the
oOtconNa/in/moOfpbfFrecFoyvcpelleaecofefQfidcti1heiennctpwy.aoFIrtapEcloloTewnlKedLwrYu1iMcthtOsCStdhF2ueEriTnssygRnptVcr1heohevureotdnnetoainudgs-
thGeNbDody diode of the bottom MQOS1FET from turning on andGsNtDoring
cahsamrguechCd1uarsin2g%th. e dead-time. This approach cDa1n improvCe 2efficiency
Vin
GND
C1
L1
FETKY
Q1
D1
Vout
GND
C2
GND
GND
Switching Circuit
Portfolio
Please see our lastest portfolio of FETKY devices on the reverse side of
this card. For additional information on our FETKY, and other MOSFET
portfolio devices, please visit our website at www.onsemi.com.
FETKY is a registered trademark of International Rectifier.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTHD3100F.PDF ] | |
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