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IXYS Corporation - Dual Power HiPerFET Module

Numéro de référence VMM90-09F
Description Dual Power HiPerFET Module
Fabricant IXYS Corporation 
Logo IXYS Corporation 





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VMM90-09F fiche technique
Advanced Technical Information
www.DataSheet4U.com
Dual Power
HiPerFETTM Module
Phaseleg Configuration
VMM 90-09F VDSS = 900 V
ID25 = 85 A
RDS(on) = 76 mW
MOSFET T1 + T2
Symbol
VDSS
VGS
ID25
ID80
IF25
IF80
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 80°C
(diode) TC = 25°C
(diode) TC = 80°C
Maximum Ratings
900 V
±20 V
85 A
65 A
85 A
65 A
Symbol
RDSon
VGSth
IDSS
IGSS
Qg
Q
gs
Qgd
td(on)
t
r
td(off)
t
f
VF
trr
RthJC
RthJS
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = ID80
VDS = 20 V; ID = 30 mA
VDS = 0.8 • VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
VGS= 10 V; VDS = 450 V; ID = 50 A
3
1.5
960
225
430
76 mW
5V
0.4 mA
mA
1 µA
nC
nC
nC
V = 10 V; V = 0.5 • V ;
GS DS DSS
ID = ID80; RG = 0.47 W
150 ns
180 ns
330 ns
140 ns
(diode)
I
F
=
90
A;
VGS
=
0
V
(diode) IF = 90 A; -di/dt = 400 A/µs; VDS = 100 V
with heat transfer paste
1.1 1.6 V
250 ns
0.08 K/W
0.12 K/W
Features
• HiPerFET TM technology
– low RDSon
– unclamped inductive switching
(UIS)
capability
– dv/dt ruggedness
– fast intrinsic reverse diode
– low gate charge
• thermistor
for internal temperature measurement
• package
– low inductive current path
– screw connection to high current
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
Applications
• converters with high power density
and high switching speed for
– power supplies
– induction heating
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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