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PDF VMM1500-0075P Data sheet ( Hoja de datos )
| Número de pieza | VMM1500-0075P | |
| Descripción | Dual Power MOSFET Module | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Dual Power
MOSFET Module
Phaseleg Configuration
Preliminary data
www.DataSheet4U.com
VMM 1500-0075P
VDSS = 75 V
ID25 = 1500 A
RDS(on) = 0.55 mΩ
3
8
91
11
10 2
MOSFET T1 + T2
Symbol
VDSS
VGS
ID25
ID80
IF25
IF80
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 80°C
(diode) TC = 25°C
(diode) TC = 80°C
①
①
①
①
Maximum Ratings
75 V
±20 V
1500
1200
A
A
1500
1100
A
A
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon
VGS = 10 V; ID = ID80
VGSth
VDS = 20 V; ID = 10 mA
2
IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
IGSS VGS = ±20 V; VDS = 0 V
Qg
Q
gs
VGS= 10 V; VDS = 60 V; ID = 500 A
Qgd
td(on)
t
r
td(off)
t
f
V = 10 V; V = 30 V;
GS DS
ID = 250 A; RG = 1 Ω
VF
(diode)
I
F
=
750
A;
VGS
=
0
V
trr (diode) IF = 200 A; -di/dt = 1000 A/µs; VDS = 30 V
RthJC
RthJS
with heat transfer paste
① additional current limitation by external leads
0.55
1.5
2480
330
940
60
170
320
200
1.2
90
0.12
0.8 mΩ
4V
0.15 mA
mA
1.5 µA
nC
nC
nC
ns
ns
ns
ns
1.6 V
ns
0.06 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
Features
• Trench MOSFETs
– low RDSon
– optimized intrinsic reverse diode
• package
– low inductive current path
– screw connection to high current
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
Applications
• converters with high power density for
– main and auxiliary AC drives of
electric vehicles
– 4 quadrant DC drives
– power supplies with low input voltage,
e.g. from fuel cells or solar cells
1-2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet VMM1500-0075P.PDF ] | |
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