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PDF 55GN01NA Data sheet ( Hoja de datos )

Número de pieza 55GN01NA
Descripción UHF Wide-band Low-noise Amplifier Applications
Fabricantes Sanyo Semicon Device 
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No Preview Available ! 55GN01NA Hoja de datos, Descripción, Manual

Ordering number : ENA1116
55GN01NA
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
55GN01NA
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise
Amplifier Applications
Features
High cutoff frequency : fT= 5.5GHz typ.
High gain
: S21e2 =7dB typ (f=1GHz).
=13dB typ (f=400MHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Marking : ZD
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
Conditions
VCB=10V, IE=0A
VEB=2V, IC=0A
VCE=5V, IC=10mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
Ratings
20
10
3
70
400
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
min
100
3.5
Ratings
typ
max
Unit
0.1 μA
1 μA
180
5.5 GHz
1.2 1.4 pF
0.8 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
www.semiconductor-sanyo.com/network
42809AB MS IM TC-00001957 No. A1116-1/6

1 page




55GN01NA pdf
S Parameters (Common emitter)
VCE=5V, IC=15mA, ZO=50Ω
Freq(MHz)
100
S11
0.393
S11
--39.40
200
0.262
--38.91
400
0.173
--37.43
600
0.104
--38.16
800
0.028
7.07
1000
0.106
91.07
1200
0.234
85.64
1400
0.364
74.15
1600
0.488
61.92
1800
0.582
49.99
2000
0.651
37.88
55GN01NA
S21
16.513
9.160
4.855
3.423
2.718
2.289
1.977
1.712
1.493
1.298
1.128
S21
111.47
91.74
70.51
54.12
37.90
21.31
4.65
--11.33
--26.87
--40.45
--52.86
S12
0.034
0.063
0.125
0.187
0.252
0.314
0.369
0.414
0.447
0.470
0.488
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
S11
100 0.346
200 0.246
400 0.173
600 0.108
800 0.034
1000
0.104
1200
0.232
1400
0.363
1600
0.486
1800
0.582
2000
0.652
S11
--36.01
--33.91
--32.88
--33.77
7.28
89.49
85.18
73.90
61.86
49.85
37.81
S21
17.139
9.298
4.887
3.442
2.732
2.301
1.991
1.721
1.504
1.298
1.132
S21
107.73
89.56
69.69
53.42
37.56
21.18
4.67
--11.37
--26.71
--40.20
--52.56
S12
0.033
0.063
0.125
0.189
0.255
0.315
0.371
0.413
0.447
0.469
0.488
VCE=5V, IC=30mA, ZO=50Ω
Freq(MHz)
S11
100 0.293
200 0.228
400 0.169
600 0.107
800 0.039
1000
0.110
1200
0.238
1400
0.367
1600
0.491
1800
0.584
2000
0.654
S11
--31.14
--27.21
--27.83
--29.09
15.22
88.31
84.51
73.61
61.74
49.63
37.73
S21
17.643
9.367
4.896
3.448
2.739
2.302
1.989
1.719
1.503
1.295
1.133
S21
103.73
87.38
68.61
52.73
36.98
20.77
4.29
--11.62
--26.98
--40.37
--52.81
S12
0.033
0.063
0.125
0.190
0.255
0.316
0.371
0.415
0.448
0.470
0.488
VCE=5V, IC=50mA, ZO=50Ω
Freq(MHz)
100
S11
0.234
200 0.190
400 0.141
600 0.085
800 0.045
1000
0.136
1200
0.261
1400
0.390
1600
0.510
1800
0.600
2000
0.667
S11
--26.34
--22.28
--22.30
--19.60
52.54
89.35
83.49
72.58
60.71
48.78
37.06
S21
17.554
9.191
4.777
3.367
2.670
2.250
1.943
1.678
1.460
1.265
1.104
S21
100.28
85.28
67.06
51.37
35.54
19.09
2.65
--13.25
--28.69
--42.00
--54.45
S12
0.033
0.063
0.126
0.189
0.255
0.317
0.371
0.413
0.448
0.469
0.489
S12
76.73
73.11
65.36
55.16
43.45
30.76
17.31
3.76
--9.20
--21.60
--33.58
S12
76.49
75.27
66.04
55.58
43.56
30.73
17.24
3.77
--9.38
--21.77
--33.82
S12
80.19
75.47
66.51
55.90
43.60
30.46
17.10
3.59
--9.46
--21.95
--33.87
S12
79.67
77.35
66.81
55.97
43.62
30.77
17.07
3.62
--9.60
--21.99
--34.03
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S22
0.638
0.540
0.468
0.409
0.329
0.221
0.117
0.106
0.213
0.321
0.415
S22
--24.75
--25.92
--34.48
--47.14
--63.84
--85.01
--126.09
143.44
99.23
78.78
64.58
S22
0.608
0.526
0.463
0.403
0.321
0.213
0.110
0.107
0.216
0.324
0.417
S22
--23.92
--24.72
--33.79
--46.59
--63.41
--85.68
--127.83
139.24
97.22
77.62
63.99
S22
0.576
0.511
0.455
0.397
0.316
0.206
0.102
0.106
0.219
0.327
0.418
S22
--22.37
--23.14
--32.68
--45.90
--62.93
--85.04
--127.75
134.87
95.38
76.66
62.92
S22
0.552
0.504
0.454
0.397
0.315
0.206
0.101
0.102
0.217
0.323
0.415
S22
--20.20
--21.25
--31.75
--45.02
--62.21
--83.77
--126.95
135.16
95.69
76.16
63.17
No. A1116-5/6

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