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PDF 55GN01CA Data sheet ( Hoja de datos )

Número de pieza 55GN01CA
Descripción NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications
Fabricantes Sanyo Semicon Device 
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No Preview Available ! 55GN01CA Hoja de datos, Descripción, Manual

Ordering number : ENA1111
55GN01CA
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
55GN01CA
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise
Amplifier Applications
Features
High cutoff frequency : fT= 5.5GHz typ.
High gain
: S21e2=9.5dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Marking : ZW
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
S21e2
NF
Conditions
VCB=10V, IE=0A
VEB=2V, IC=0A
VCE=5V, IC=10mA
VCE=3V, IC=5mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=3V, IC=5mA, f=1GHz, ZS=ZL=50Ω
Ratings
20
10
3
70
200
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Ratings
min typ
100
3.0 4.5
5.5
1.1
0.7
6.5 9.5
1.9
max
0.1
1
180
1.3
Unit
μA
μA
GHz
GHz
pF
pF
dB
dB
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
www.semiconductor-sanyo.com/network
O2908AB MS IM TC-00001675 No. A1111-1/6

1 page




55GN01CA pdf
S Parameters (Common emitter)
VCE=5V, IC=15mA, ZO=50Ω
Freq(MHz)
100
S11
0.511
S11
--75.82
200
0.379
--111.32
400
0.315
--144.06
600
0.302
--158.98
800
0.301
--168.64
1000
0.307
--176.32
1200
0.314
177.94
1400
0.322
172.88
1600
0.329
167.84
1800
0.337
163.07
2000
0.348
159.32
55GN01CA
S21
20.333
12.202
6.538
4.489
3.455
2.857
2.433
2.153
1.961
1.792
1.676
S21
125.66
106.68
90.52
81.46
74.33
67.93
62.00
57.01
51.67
46.79
42.28
S12
0.034
0.051
0.084
0.118
0.153
0.186
0.217
0.256
0.286
0.308
0.355
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
S11
100 0.461
200 0.346
400 0.299
600 0.293
800 0.295
1000
0.299
1200
0.307
1400
0.316
1600
0.325
1800
0.333
2000
0.343
S11
--82.96
--118.63
--149.09
--162.67
--171.32
--178.25
176.25
172.08
166.77
162.69
158.91
S21
21.657
12.582
6.669
4.554
3.503
2.900
2.468
2.178
1.988
1.813
1.692
S21
121.91
104.09
89.15
80.67
73.57
67.59
61.65
56.76
51.53
46.81
42.30
S12
0.031
0.049
0.084
0.118
0.153
0.187
0.221
0.260
0.290
0.310
0.357
VCE=5V, IC=30mA, ZO=50Ω
Freq(MHz)
S11
100 0.399
200 0.317
400 0.289
600 0.288
800 0.293
1000
0.298
1200
0.306
1400
0.318
1600
0.327
1800
0.336
2000
0.347
S11
--93.89
--127.93
--154.90
--166.40
--174.03
179.55
174.88
170.70
165.85
161.66
158.15
S21
22.859
12.830
6.712
4.587
3.524
2.904
2.478
2.188
1.992
1.815
1.699
S21
117.43
101.25
87.64
79.56
72.71
66.80
61.04
56.20
50.94
46.08
41.95
S12
0.029
0.045
0.082
0.119
0.155
0.190
0.223
0.261
0.292
0.313
0.358
VCE=5V, IC=50mA, ZO=50Ω
Freq(MHz)
100
S11
0.362
200 0.317
400 0.307
600 0.310
800 0.316
1000
0.324
1200
0.333
1400
0.345
1600
0.354
1800
0.363
2000
0.376
S11
--108.51
--140.52
--162.72
--172.48
--178.74
175.82
171.21
167.33
162.55
158.67
155.01
S21
22.521
12.288
6.363
4.352
3.340
2.762
2.353
2.077
1.888
1.725
1.615
S21
112.91
98.38
85.74
77.92
71.23
65.12
59.35
54.36
49.16
44.33
39.70
S12
0.026
0.044
0.080
0.119
0.153
0.189
0.220
0.260
0.289
0.313
0.361
S12
62.58
63.43
68.22
69.82
69.70
68.77
68.37
66.71
62.74
61.86
61.87
S12
64.47
64.74
70.72
71.64
70.77
69.56
68.70
66.77
62.70
62.12
61.46
S12
65.09
68.93
71.95
72.93
72.01
70.26
69.29
66.98
63.01
62.10
61.22
S12
65.35
72.35
73.69
74.51
72.84
71.55
70.16
68.28
63.88
63.21
62.47
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S22
0.649
0.445
0.326
0.299
0.290
0.296
0.302
0.311
0.325
0.337
0.359
S22
--37.05
--45.58
--47.13
--49.32
--54.83
--60.27
--65.94
--71.94
--79.69
--84.37
--88.78
S22
0.600
0.406
0.302
0.283
0.275
0.282
0.290
0.300
0.316
0.325
0.347
S22
--39.22
--46.06
--46.24
--49.39
--54.70
--60.94
--66.45
--72.89
--80.43
--85.59
--89.65
S22
0.537
0.364
0.281
0.266
0.262
0.269
0.279
0.289
0.305
0.318
0.337
S22
--40.85
--45.35
--44.97
--48.17
--54.35
--60.45
--66.19
--73.12
--80.46
--85.63
--90.00
S22
0.481
0.338
0.278
0.271
0.270
0.280
0.289
0.300
0.317
0.330
0.352
S22
--39.63
--40.74
--40.44
--44.11
--50.45
--57.21
--63.53
--70.35
--78.50
--83.35
--88.07
No. A1111-5/6

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