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PDF 2SC5838 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5838 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
2SC5838
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
15
10
2
80
100
125
−55 to +125
Unit
V
V
V
mA
mW
°C
°C
www.DataSheet4U.com
Unit: mm
32
1.00±0.05
1
0.39+−00..0013
0.25±0.05
0.25±0.05
1
32
0.65±0.01
0.05±0.03
Marking symbol: 1F
1: Base
2: Emitter
3: Collector
ML3-N2 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Forward transfer gain
Noise figure
Maximum unilateral power gain
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
ICBO
IEBO
hFE
S21e2
NF
GUM
Cob
IC = 10 µA, IE = 0
IC = 100 µA, IB = 0
VCB = 10 V, IE = 0
VEB = 2 V, IC = 0
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA, f = 800 MHz
VCE = 8 V, IC = 20 mA, f = 800 MHz
VCE = 8 V, IC = 20 mA, f = 800 MHz
VCB = 10 V, IE = 0, f = 1 MHz
15
10
1
1
110 250
7.5 10.0
1.7
11.5
0.9 1.2
V
V
µA
µA
dB
dB
dB
pF
Transition frequency
fT VCE = 8 V, IC = 20 mA, f = 800 MHz 5.0 6.0
GHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJC00288AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5838.PDF ] | |
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