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Toshiba Semiconductor - CMOS Digital Integrated Circuit Silicon Monolithic

Numéro de référence TC7SP302WBG
Description CMOS Digital Integrated Circuit Silicon Monolithic
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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TC7SP302WBG fiche technique
TC7SP302WBG
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic www.DataSheet4U.com
TC7SP302WBG
Dual supply 2-Input NOR Gate with Level Translator
The TC7SP302 is a dual supply, advanced high-speed CMOS
2-input dual supply voltage interface NOR gate fabricated with
silicon gate CMOS technology.
It is also designed with over voltage tolerant inputs and
outputs up to 3.6 V.
Designed for use as an interface between a 1.2-V, 1.5-V, 1.8-V,
or 2.5-V bus and a 1.8-V, 2.5-V or 3.3-V bus in mixed 1.2-V, 1.5-V,
1.8-V or 2.5-V/1.8-V, 2.5-V or 3.3-V supply systems.
All inputs are equipped with protection circuits against static
discharge.
S-WFBGA6-0102-0.40A01
Weight: 1 mg (typ)
Features
Level converter for interfacing 1.2-V to 1.8-V, 1.2-V to 2.5-V, 1.2-V to 3.3-V, 1.5-V to 2.5-V, 1.5-V to 3.3-V, 1.8-V to
2.5-V, 1.8-V to 3.3-V or 2.5 V to 3.3-V system.
High-speed operation :
tpd = 6.8 ns (max) (VCCA = 2.5 ± 0.2 V, VCCB = 3.3 ± 0.3 V)
tpd = 7.8 ns (max) (VCCA = 1.8 ± 0.15 V, VCCB = 3.3 ± 0.3 V)
tpd = 9.0 ns (max) (VCCA = 1.5 ± 0.1 V, VCCB = 3.3 ± 0.3 V)
tpd = 31 ns (max) (VCCA = 1.2 ± 0.1 V, VCCB = 3.3 ± 0.3 V)
tpd = 9.5 ns (max) (VCCA = 1.8 ± 0.15 V, VCCB = 2.5 ± 0.2 V)
tpd = 10.5 ns (max) (VCCA = 1.5 ± 0.1 V, VCCB = 2.5 ± 0.2 V)
tpd = 32 ns (max) (VCCA = 1.2 ± 0.1 V, VCCB = 2.5 ± 0.2 V)
tpd = 37 ns (max) (VCCA = 1.2 ± 0.1 V, VCCB = 1.8 ± 0.15 V)
Output current :
IOH/IOL = ±12 mA (min) (VCC = 3.0 V)
IOH/IOL = ±9mA (min) (VCC = 2.3 V)
IOH/IOL = ±3 mA (min) (VCC = 1.65 V)
Latch-up performance: -300 mA
ESD performance:
Machine model ≥ ±200 V
Human body model ≥ ±2000 V
Ultra-small package:
WCSP6
Power-down protection is provided on all inputs and outputs
1 2009-05-13

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