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Hynix Semiconductor - Registered DDR SDRAM DIMM

Numéro de référence HYMD264G726BL8-H
Description Registered DDR SDRAM DIMM
Fabricant Hynix Semiconductor 
Logo Hynix Semiconductor 





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HYMD264G726BL8-H fiche technique
DESCRIPTION
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64Mx72 bits
Registered DDR SDRAM DIMM
HYMD264G726B(L)8-M/K/H/L
Hynix HYMD264G726B(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line
Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMD264G726B(L)8-
M/K/H/L series consists of eighteen 32Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy sub-
strate. Hynix HYMD264G726B(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form fac-
tor of industry standard. It is suitable for easy interchange and addition.
Hynix HYMD264G726B(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous
operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs
are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both ris-
ing and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth.
All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and
burst lengths allow variety of device operation in high performance memory system.
Hynix HYMD264G726B(L)8-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function
is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to iden-
tify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.
FEATURES
• 512MB (64M x 72) Registered DDR DIMM based on • Fully differential clock operations (CK & /CK) with
32Mx8 DDR SDRAM
100MHz/125MHz/133MHz
• JEDEC Standard 184-pin dual in-line memory mod-
ule (DIMM)
• Error Check Correction (ECC) Capability
• Programmable CAS Latency 2 / 2.5 supported
• Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
• Registered inputs with one-clock delay
• tRAS Lock-out function supported
• Phase-lock loop (PLL) clock driver to reduce loading • Internal four bank operations with single pulsed RAS
• 2.5V +/- 0.2V VDD and VDDQ Power supply
• Auto refresh and self refresh supported
• All inputs and outputs are compatible with SSTL_2
interface
• 8192 refresh cycles / 64ms
ORDERING INFORMATION
Part No.
HYMD264G726B(L)8-M
HYMD264G726B(L)8-K
HYMD264G726B(L)8-H
HYMD264G726B(L)8-L
Power Supply
VDD=2.5V
VDDQ=2.5V
Clock Frequency Interface
133MHz (*DDR266:2-2-2)
133MHz (*DDR266A)
133MHz (*DDR266B)
100MHz (*DDR200)
SSTL_2
Form Factor
184pin Registered DIMM
5.25 x 1.7 x 0.15 inch
* JEDEC Defined Specifications compliant
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.1/Oct. 02
1

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