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PDF HYMD264G726B8-M Data sheet ( Hoja de datos )
| Número de pieza | HYMD264G726B8-M | |
| Descripción | Registered DDR SDRAM DIMM | |
| Fabricantes | Hynix Semiconductor | |
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DESCRIPTION
www.DataSheet4U.com
64Mx72 bits
Registered DDR SDRAM DIMM
HYMD264G726B(L)8-M/K/H/L
Hynix HYMD264G726B(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line
Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMD264G726B(L)8-
M/K/H/L series consists of eighteen 32Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy sub-
strate. Hynix HYMD264G726B(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form fac-
tor of industry standard. It is suitable for easy interchange and addition.
Hynix HYMD264G726B(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous
operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs
are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both ris-
ing and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth.
All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and
burst lengths allow variety of device operation in high performance memory system.
Hynix HYMD264G726B(L)8-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function
is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to iden-
tify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.
FEATURES
• 512MB (64M x 72) Registered DDR DIMM based on • Fully differential clock operations (CK & /CK) with
32Mx8 DDR SDRAM
100MHz/125MHz/133MHz
• JEDEC Standard 184-pin dual in-line memory mod-
ule (DIMM)
• Error Check Correction (ECC) Capability
• Programmable CAS Latency 2 / 2.5 supported
• Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
• Registered inputs with one-clock delay
• tRAS Lock-out function supported
• Phase-lock loop (PLL) clock driver to reduce loading • Internal four bank operations with single pulsed RAS
• 2.5V +/- 0.2V VDD and VDDQ Power supply
• Auto refresh and self refresh supported
• All inputs and outputs are compatible with SSTL_2
interface
• 8192 refresh cycles / 64ms
ORDERING INFORMATION
Part No.
HYMD264G726B(L)8-M
HYMD264G726B(L)8-K
HYMD264G726B(L)8-H
HYMD264G726B(L)8-L
Power Supply
VDD=2.5V
VDDQ=2.5V
Clock Frequency Interface
133MHz (*DDR266:2-2-2)
133MHz (*DDR266A)
133MHz (*DDR266B)
100MHz (*DDR200)
SSTL_2
Form Factor
184pin Registered DIMM
5.25 x 1.7 x 0.15 inch
* JEDEC Defined Specifications compliant
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.1/Oct. 02
1
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www.DataSh
HYMD264G726B(L)8-M/K/H/L
AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Parameter
Reference Voltage
Termination Voltage
AC Input High Level Voltage (VIH, min)
AC Input Low Level Voltage (VIL, max)
Input Timing Measurement Reference Level Voltage
Output Timing Measurement Reference Level Voltage
Input Signal maximum peak swing
Input minimum Signal Slew Rate
Termination Resistor (RT)
Series Resistor (RS)
Output Load Capacitance for Access Time Measurement (CL)
Value
VDDQ x 0.5
VDDQ x 0.5
VREF + 0.31
VREF - 0.31
VREF
VTT
1.5
1
50
25
30
Unit
V
V
V
V
V
V
V
V/ns
W
W
pF
Rev. 0.1/Oct. 02
5
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HYMD264G726B(L)8-M/K/H/L
5. CK, /CK slew rates are >=1.0V/ns
6. These parameters quarantee device timing, but they are not necessarily tested on each device, and they may be quaranteed by
design or tester correlation.
7. Data latched at both rising and falling edges of Data Strobes(LDQS/UDQS) : DQ, LDM/UDM.
8. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete
Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM.
9. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device
(i.e. this value can be greater than the minimum specification limits for tCL and tCH).
10. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of
tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects and p-channel
to n-channel variation of the output drivers.
11. This derating table is used to increase tDS/tDH in case where the input slew-rate is below 0.5V/ns.
Input Setup / Hold Slew-rate Derating Table.
Input Setup / Hold Slew-rate
Delta tDS
Delta tDH
V/ns
ps ps
0.5 0 0
0.4 +75 +75
0.3
+150
+150
12. I/O Setup/Hold Plateau Derating. This derating table is used to increase tDS/tDH in case where the input level is flat below
VREF +/-310mV for a duration of up to 2ns.
I/O Input Level
Delta tDS
Delta tDH
mV ps ps
+280
+50 +50
13. I/O Setup/Hold Delta Inverse Slew Rate Derating. This derating table is used to increase tDS/tDH in case where the DQ and
DQS slew rates differ. The Delta Inverse Slew Rate is calculated as (1/SlewRate1)-(1/SlewRate2). For example, if slew rate
1=0.5V/ns and Slew Rate2 = 0.4V/n then the Delta Inverse Slew Rate = -0.5ns/V.
(1/SlewRate1)-(1/SlewRate2)
Delta tDS
Delta tDH
ns/V
ps ps
0 00
+/-0.25
+50 +50
+/- 0.5
+100
+100
14. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times.
Signal transi tions through the DC region must be monotonic.
15. tDAL = (tDPL / tCK ) + (tRP / tCK ). For each of the terms above, if not already an integer, round to the next highest integer.
tCK is equal to the actual system clock cycle time.
Example: For DDR266B at CL=2.5 and tCK = 7.5 ns,
tDAL = (15 ns / 7.5 ns) + (20 ns / 7.5 ns) = (2.00) + (2.67)
Round up each non-integer to the next highest integer: = (2) + (3), tDAL = 5 clock
16. For the parts which do not has internal RAS lockout circuit, Active to Read with Auto precharge delay should be
tRAS - BL/2 x tCK.
17. tHZ and tLZ transitions occur in the same access time windows as valid data trasitions. These parameters are not referenced
to a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ).
Rev. 0.1/Oct. 02
11
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| HYMD264G726B8-L | Registered DDR SDRAM DIMM | Hynix Semiconductor |
| HYMD264G726B8-M | Registered DDR SDRAM DIMM | Hynix Semiconductor |
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