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Número de pieza | TC2182 | |
Descripción | Low Noise Ceramic Packaged PHEMT GaAs FETs | |
Fabricantes | Transcom | |
Logotipo | ||
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TC2182
REV4_20070504
Low Noise Ceramic Packaged PHEMT GaAs FETs
FEATURES
• 0.5 dB Typical Noise Figure at 12 GHz
• High Associated Gain: Ga = 13 dB Typical at 12 GHz
• Lg = 0.25 µm, Wg = 160 µm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2182 is a high performance field effect transistor housed in a ceramic micro-x package with TC1102 PHEMT
Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for
use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
NF
Ga
IDSS
gm
VP
BVDGO
Rth
Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz
Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 0.32mA
Drain-Gate Breakdown Voltage at IDGO = 0.08mA
Thermal Resistance
0.5 0.7 dB
10 13
dB
48 mA
55 mS
-1.0*
Volts
59
Volts
250 °C/W
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
VDS
VGS
IDS
IGS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
5.0 V
-3.0 V
IDSS
160 µA
17 dBm
150 mW
175 °C
- 65 °C to +175 °C
TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 2 V, IDS = 10 mA
Frequency NFopt
GA
Γopt Rn/50
MAG ANG
2 0.32 19.0 0.98 15 0.40
4 0.33 17.4 0.84 30 0.35
6 0.35 15.7 0.68 50 0.26
8 0.39 14.3 0.51 76 0.19
10 0.44 12.9 0.38 107 0.12
12 0.50 11.9 0.28 146 0.08
14 0.58 11.4 0.25 -167 0.07
16 0.74 11.2 0.32 -110 0.11
18 0.91 10.9 0.49 -43 0.23
* For the tight control of the pinch-off voltage range, we divide TC2182 into 3 model numbers to fit customer design requirement
(1)TC2182P0710 : Vp = -0.7V to -1.0V (2)TC2182P0811 : Vp = -0.8V to -1.1V (3)TC2182P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
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Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet TC2182.PDF ] |
Número de pieza | Descripción | Fabricantes |
TC2181 | Low Noise and High Dynamic Range Packaged GaAs FETs | Transcom |
TC2182 | Low Noise Ceramic Packaged PHEMT GaAs FETs | Transcom |
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