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PDF TC2181 Data sheet ( Hoja de datos )
| Número de pieza | TC2181 | |
| Descripción | Low Noise and High Dynamic Range Packaged GaAs FETs | |
| Fabricantes | Transcom | |
| Logotipo |  |
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TC2181
REV4_20070504
Low Noise and High Dynamic Range Packaged GaAs FETs
FEATURES
! 0.5 dB Typical Noise Figure at 12 GHz
! High Associated Gain: Ga = 12 dB Typical at 12 GHz
! 18.5 dBm Typical Power at 12 GHz
! 13 dB Typical Linear Power Gain at 12 GHz
! Breakdown Voltage : BVDGO ≥ 9V
! Lg = 0.25 µm, Wg = 160 µm
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
! Micro-X Metal Ceramic Package
DESCRIPTION
PHOTO ENLARGEMENT
The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101
PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device
suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
CONDITIONS
MIN TYP MAX UNIT
NF Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz
0.5 0.7 dB
Ga Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
10 12
dB
P1dB Output Power at 1dB Gain Compression Point, f = 12 GHz VDS = 6 V, IDS = 25 mA 17.5
18.5
dBm
GL Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 25 mA
11 13
dB
IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
48 mA
gm Transconductance at VDS = 2 V, VGS = 0 V
55 mS
VP Pinch-off Voltage at VDS = 2 V, ID = 0.32mA
-1.0*
Volts
BVDGO Drain-Gate Breakdown Voltage at IDGO = 0.08mA
9 12
Volts
Rth Thermal Resistance
250 °C/W
ABSOLUTE MAXIMUM RATINGS (TA=25 °C) TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 2 V, IDS = 10 mA
Symbol
VDS
VGS
IDS
IGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
Rating
7.0 V
-3.0 V
IDSS
160 µA
Frequency
(GHz)
2
4
6
8
NFopt
(dB)
0.33
0.35
0.37
0.40
GA
(dB)
Γopt
MAG ANG
Rn/50
18.4 1.00 15
0.42
16.8 0.86 32
0.36
15.2 0.70 53
0.28
13.8 0.53 79
0.20
Pin RF Input Power, CW
18 dBm
10 0.46 12.5 0.39 112 0.12
PT Continuous Dissipation
150 mW
12 0.52 11.5 0.29 153 0.09
TCH Channel Temperature
TSTG
Storage Temperature
175 °C
- 65 °C to +175 °C
14 0.61 11.0 0.26 202 0.08
16 0.77 10.9 0.32 262 0.11
18 0.95 10.6 0.51 332 0.24
* For the tight control of the pinch-off voltage range, we divide TC2181 into 3 model numbers to fit customer design requirement
(1)TC2181P0710 : Vp = -0.7V to -1.0V (2)TC2181P0811 : Vp = -0.8V to -1.1V (3)TC2181P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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| PDF Descargar | [ Datasheet TC2181.PDF ] | |
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