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ACE2305 Datasheet دیتاشیت PDF دانلود

دیتاشیت - ACE Technology - P-Channel Enhancement Mode MOSFET

شماره قطعه ACE2305
شرح مفصل P-Channel Enhancement Mode MOSFET
تولید کننده ACE Technology 
آرم ACE Technology 


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ACE2305 شرح
ACE2305www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Description
The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
-15V/-3.5A, RDS(ON)=70mΩ@VGS=-4.5V
-15V/-3.0A, RDS(ON)=85mΩ@VGS=-2.5V
-15V/-2.0A, RDS(ON)=105mΩ@VGS=-1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS -15 V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150)
TA=25
TA=70
ID
-3.5 A
-2.8
Pulsed Drain Current
IDM -10 A
Continuous Source Current (Diode Conduction) IS
-1.6 A
Power Dissipation
TA=25
TA=70
PD
1.25 W
0.8
Operating Junction Temperature
TJ 150
Storage Temperature Range
TSTG -55/150
Thermal Resistance-Junction to Ambient
RθJA 120 /W
VER 1.2 1

قانون اساسیصفحه 8
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