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ACE2301 Datasheet دیتاشیت PDF دانلود

دیتاشیت - ACE Technology - P-Channel Enhancement Mode MOSFET

شماره قطعه ACE2301
شرح مفصل P-Channel Enhancement Mode MOSFET
تولید کننده ACE Technology 
آرم ACE Technology 


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ACE2301 شرح
ACE2301www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Description
The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
VDS=-20V
RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ
RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1)
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Storage Temperature Range
Junction to Ambient Thermal Resistance (PCB mounted)2)
VDS
VGS
ID
IDM
PD
TJ
TSTG
RθJA
-20 V
±12 V
-2.2 A
-8 A
1.25 W
0.8
-55 to 150 OC
-55 to 150 OC
140 OC/W
Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature.
2.1-in2 2oz Cu PCB board.
3.Guaranteed by design; not subject to production testing.
VER 1.2 1

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