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PDF ACE3400 Data sheet ( Hoja de datos )

Número de pieza ACE3400
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes ACE Technology 
Logotipo ACE Technology Logotipo



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No Preview Available ! ACE3400 Hoja de datos, Descripción, Manual

Technology
ACE3400www.DataSheet4U.com
N-Channel Enhancement Mode MOSFET
Description
The ACE3400 is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Features
30V/5.4A, RDS(ON)=38mΩ@VGS=10V
30V/4.6A, RDS(ON)=42mΩ@VGS=4.5V
30V/3.8A, RDS(ON)=55mΩ@VGS=2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS 30 V
Gate-Source Voltage
VGSS ±20 V
Continuous Drain Current (TJ=150)
TA=25
TA=70
ID
4.5
3.5
A
Pulsed Drain Current
IDM 25 A
Continuous Source Current (Diode Conduction) IS
1.7 A
Power Dissipation
TA=25
TA=70
PD
2.0
1.3
W
Operating Junction Temperature
TJ 150 OC
Storage Temperature Range
TSTG -55/150 OC
Thermal Resistance-Junction to Ambient
RθJA
90 OC/W
VER 1.2 1

1 page




ACE3400 pdf
ACE3400www.DataSheet4U.com
Technology N-Channel Enhancement Mode MOSFET
Normalized Thermal Transient Impedance, Junction-to Foot
Square Wave Pulse Duration
VER 1.2 5

5 Page










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