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ELC-470-31-1 fiches techniques PDF

EPIGAP optoelectronic GmbH - LED - Chip

Numéro de référence ELC-470-31-1
Description LED - Chip
Fabricant EPIGAP optoelectronic GmbH 
Logo EPIGAP optoelectronic GmbH 





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ELC-470-31-1 fiche technique
LED - Chip
Preliminary
Radiation
Blue
1000
N
N
Type
Standard
P
P
ELС-470-31-1
10.04.2007
rev. 02/07
www.DataSheet4U.com
Technology
Electrodes
InGaN/Al2O3
Both on top side
typ. dimensions (±25) µm
typ. thickness
90 (±10) µm
contact metalization
gold alloy, 1.5 µm
backside metalization
aluminium alloy, 1.0 µm
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Forward voltage
IF = 20 mA
Forward voltage1)
IF = 350 mA
Reverse voltage
IR = 10 µA
Radiant power
IF = 20 mA
Radiant power1,2)
IF = 350 mA
Luminous intensity1)
IF = 350 mA
Peak wavelength
IF = 350 mA
Dominant wavelength
IF = 350 mA
Spectral bandwidth at 50% IF = 350 mA
Switching time
IF = 20 mA
1) Measured on bare chip on TO-18 header
2) information only
Symbol
VF
VF
VR
Φe
Φe
ΙV
λP
λP
∆λ0.5
tr, tf
Min
5
8.8
6000
465
Typ
2.7
3.24
11.5
150
6500
467
470
35
60
Max Unit
3.0 V
3.7 V
V
mW
mW
mcd
nm
475 nm
nm
ns
Labeling
Type
ELС-470-31-1
Lot N°
Φe(typ) [mW] VF(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Quantity
1 of 1

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