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PDF IRH9150 Data sheet ( Hoja de datos )
| Número de pieza | IRH9150 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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PD - 90879C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AE)
IRH9150
100V, P-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRH9150
100K Rads (Si) 0.075Ω
IRH93150
300K Rads (Si) 0.075Ω
ID
-22A
-22A
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-204AE
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-22
-14 A
-88
150 W
1.2 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy ➁
500
mJ
IAR Avalanche Current ➀
-22 A
EAR
Repetitive Avalanche Energy ➀
1.5 mJ
dv/dt
Peak Diode Recovery dv/dt ➂
-23 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
oC
Weight
11.5 (Typical )
g
For footnotes refer to the last page
www.irf.com
1
02/18/03
1 page  
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Pre-Irradiation
IRH9150
7000
6000
5000
4000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
3000
2000
Coss
1000
0
1
Crss
10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -22A
16
12
VDS =-80V
VDS = -50V
VDS = -20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150° C
10
TJ = 25°C
VGS = 0 V
1
0.0 1.0 2.0 3.0 4.0
-VSD ,Source-to-Drain Voltage (V)
100
100us
1ms
10
10ms
TC = 25°C
TJ = 150°C
Single Pulse
1
1 10 100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRH9150.PDF ] | |
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