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PDF M65608E Data sheet ( Hoja de datos )
| Número de pieza | M65608E | |
| Descripción | 5-Volt Very Low Power CMOS SRAM | |
| Fabricantes | ATMEL Corporation | |
| Logotipo |  |
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Features
• Operating Voltage: 5V
• Access Time: 30, 45 ns
• Very Low Power Consumption
– Active: 600 mW (Max)
– Standby: 1 µW (Typ)
• Wide Temperature Range: -55⋅C to +125⋅C
• 400 Mils Width Packages: FP32 and SB32
• TTL Compatible Inputs and Outputs
• Asynchronous
• No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2
• Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019
• QML Q and V with SMD 5962-89598
• ESCC with Specification 9301/047
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
PRF 38535 or ESCC 9000.
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Rad. Tolerant
128Kx8, 5-Volt
Very Low Power
CMOS SRAM
M65608E
1 page  
DC Parameters
DC Test Conditions
Table 3. DC Test Conditions
TA = -55°C to + 125°C; Vss = 0V; VCC = 4.5V to 5.5V
Symbol
Description
Minimum
IIX (1)
Input leakage
current
-1
IOZ(1)
Output leakage
current
-1
VOL (2)
Output low voltage
–
VOH (3)
Output high
voltage
2.4
1. GND < Vin < VCC, GND < Vout < VCC Output Disabled.
2. VCC min. IOL = 8 mA
3. VCC min. IOH = -4 mA.
Typical
–
–
–
–
Consumption
Symbol
Description
65608E-30
65608E-45
ICCSB (1)
Standby supply
current
2
2
ICCSB1 (2)
Standby supply
current
300
300
ICCOP (3)
Dynamic operating
current
110
100
1. CS1 > VIH or CS2 < VIL and CS1 < VIL.
2. CS1 > VCC - 0.3V or, CS2 < GND + 0.3V and CS1 < 0.2V.
3. F = 1/TAVAV, Iout = 0 mA, W = OE = VIH, Vin = GND or VCC, VCC max.
M65608E
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Maximum
1
1
0.4
–
Unit
µA
µA
V
V
Unit Value
mA max
µA max
mA max
4151N–AERO–04/09
5
5 Page 
Read Cycle 1
Read Cycle 2
Read Cycle 3
4151N–AERO–04/09
M65608E
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11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet M65608E.PDF ] | |
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