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PDF NTMS4873NF Data sheet ( Hoja de datos )
| Número de pieza | NTMS4873NF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMS4873NF
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Power MOSFET
30 V, 11.5 A, N−Channel, SO−8
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Includes SyncFET Schottky Diode
• Optimized Gate Charge to Minimize Switching Losses
• SOIC−8 Surface Mount Package Saves Board Space
• This is a Pb−Free Device
Applications
• Synchronous FET for DC−DC Converters
• Low Side Notebook Non−VCORE Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Drain−to−Source Voltage
VDSS
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
TA = 70°C
VGS
ID
Power Dissipation
(Note 1)
RqJA
TA = 25°C
PD
Value
30
±20
8.9
7.2
1.39
Continuous Drain
Current RqJA (Note 2)
Steady
TA = 25°C
TA = 70°C
ID
7.1
5.7
Power Dissipation
(Note 2)
RqJA
State
TA = 25°C
PD
0.87
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
TA = 25°C
TA = 70°C
ID
11.5
9.2
Power Dissipation
RqJA, t v 10 s(Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 11 Apk, L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
PD 2.31
IDM 56
TJ, −55 to
Tstg 150
IS 3.3
EAS 60.5
TL 260
Unit
V
V
A
W
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 10 s (Note 1)
RqJA
RqJA
89.9 °C/W
54.2
Junction−to−Foot (Drain)
RqJF
35.6
Junction−to−Ambient – Steady State (Note 2)
RqJA
143
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
30 V
RDS(ON) MAX
12 mW @ 10 V
15 mW @ 4.5 V
ID MAX
11.5 A
N−Channel
D
G
S
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4873NF = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4873NFR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 1
1
Publication Order Number:
NTMS4873NF/D
1 page  
100 50% Duty Cycle
20%
10
10%
5%
2%
1
1%
0.1
NTMS4873NF
TYPICAL CHARACTERISTICS
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0.01 Single Pulse
0.001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 13. Thermal Response − RqJA at Steady State (1 inch sq pad)
100 1000
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| PDF Descargar | [ Datasheet NTMS4873NF.PDF ] | |
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